SBOS059B November   1996  – January 2026 INA132

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics 15V
    6. 5.6 Electrical Characteristics 5V
    7. 5.7 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Applications Information
      1. 6.1.1 Operating Voltage
      2. 6.1.2 Offset Voltage Trim
      3. 6.1.3 Capacitive Load Drive Capability
    2. 6.2 Typical Applications
  8. 7Device and Documentation Support
    1. 7.1 Device Nomenclature
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

Electrical Characteristics 15V

at TA = 25°C, VS = ±15V, RL = 10kΩ, VREF = 0V, VCM = VS/2, G = 1, and all chip site origins (CSO), unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VOS Offset voltage(1) RTO INA132 ±75 ±250 µV
INA132A ±75 ±500
Offset voltage drift(1) RTO, TA = –40°C to +85°C INA132 ±1 ±5 µV/°C
INA132A ±1 ±10(4)
Long-term stability(1) ±0.3 µV/mo
PSRR Power-supply rejection ratio(1) RTO, VS =  ±1.35V to ±18V ±5 ±30 µV/V
VCM Common-mode voltage VO = 0V (V–) 2(V+) – 2 V
CMRR Common-mode rejection VCM = –15V to +28V, RS = 0Ω INA132 76 90 dB
INA132A 70 90 dB
Differential input impedance(2) 80 kΩ
Common-mode input impedance(2) 80 kΩ
NOISE
eN Voltage noise(3) RTO, fB = 0.1Hz to 10Hz 1.6 µVPP 
RTO, f = 1kHz 75 nV/√Hz
GAIN
Gain 1 V/V
GE Gain error VO = –14V to +13.5V INA132 ±0.01 ±0.075 %
INA132A ±0.01 ±0.1
Gain error drift(4) TA = –40°C to +85°C  ±1 ±10 ppm/°C
Gain nonlinearity VO = –14V to +13.5V   INA132 ±0.0001 ±0.001 % of FSR
INA132A ±0.0001 ±0.002
OUTPUT
Positive output voltage swing RL = 100kΩ  (V+) – 1 (V+) – 0.8 V
RL = 10kΩ (V+) – 1.5 (V+) – 0.8
Negative output voltage swing RL = 100kΩ  (V–) + 0.5 (V–) + 0.15 V
RL = 10kΩ (V–) + 1 (V–) + 0.25
CL Load capacitance Stable operation 10000 pF
ISC Short-circuit current Continuous to VS / 2 CSO: SHE +6/-15 mA
CSO: TID +26/-22
FREQUENCY RESPONSE
BW Small signal bandwidth, –3dB 300 kHz
SR Slew rate CSO: SHE 0.1 V/µs
CSO: TID 0.25
tS Settling time VO = 10V step 0.1% 85 µs
0.01% 88
Overload recovery time 50% input overdrive CSO: TID 2.35 µs
CSO: SHE 7
POWER SUPPLY
IQ Quiescent current VIN = 0V ±175 ±230 µA
Includes effects of amplifier input bias and offset currents.
40kΩ resistors are ratio matched but have ±20% absolute value.
Includes effects of amplifier input current noise and thermal noise contribution of resistor network.
Specified by wafer test to 95% confidence level.