SBOS154C September   2000  – January 2026 INA117

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
  7. 6 Typical Characteristics
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Common-mode Rejection
      2. 7.1.2 Transfer Function
      3. 7.1.3 Measuring Current
      4. 7.1.4 Noise Performance
  9. 8 Device and Documentation Support
    1. 8.1 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

9 Revision History

Changes from Revision B (April 2024) to Revision C (January 2026)

  • Added different fabrication process specifications for Bandwidth, –3dB to the Description sectionGo
  • Added description of device flow information in the Specifications Go
  • Added different fabrication process specifications for Offset voltage in the Electrical Characteristics Go
  • Added all chips site origins (CSO) condition to the typical test conditions in the Electrical Characteristics Go
  • Added different fabrication process specifications for Offset voltage drift in the Electrical Characteristics Go
  • Added different fabrication process specifications for Common-mode voltage rejection in the Electrical Characteristics Go
  • Added different fabrication process specifications for Common-mode input impedance in the Electrical Characteristics Go
  • Added different fabrication process specifications for Gain nonlinearity in the Electrical Characteristics Go
  • Added different fabrication process specifications for Output voltage in the Electrical Characteristics Go
  • Added different fabrication process specifications for Load capacitance in the Electrical Characteristics Go
  • Added different fabrication process specifications for Short-circuit current in the Electrical Characteristics Go
  • Added different fabrication process specifications for Bandwidth, -3dB in the Electrical Characteristics Go
  • Added different fabrication process specifications for Full power bandwidth in the Electrical Characteristics Go
  • Added different fabrication process specifications for Slew rate in the Electrical Characteristics Go
  • Added different fabrication process specifications for Quiescent current in the Electrical Characteristics Go
  • Added typical test conditions in the Typical Characteristics Go
  • Added all chips site origins (CSO) condition to the typical test conditions in the Typical Characteristics Go
  • Added CSO: SHE to Common-mode Rejection vs Frequency, Power-supply Rejection vs Frequency, Positive Common-mode Voltage Range vs Positive Power-supply Voltage, Negative Common-mode Voltage Range vs Negative Power-supply Voltage, Small Signal Step Response, andLarge Signal Step Response curves in the Typical Characteristics Go
  • Added Common-mode Rejection vs Frequency, Positive Power-supply Rejection vs Frequency, Negative Power-supply Rejection vs Frequency, Common-mode Voltage Range vs Power-supply Voltage , Small Signal Step Response, Small Signal Step Response vs Capacitive Load, and Large Signal Step Response curves for CSO: TID in the Typical Characteristics Go
  • Added Part Number flow information table to the Device Nomenclature Go

Changes from Revision A (November 2000) to Revision B (April 2024)

  • Updated the formatting for tables, figures, and cross-references throughout the documentGo
  • Deleted information about the INA117AM and INA117SM variants throughout this documentGo
  • Changed pin 8 from "Comp" to "NC" in the Description and Pin Configuration and Functions sectionsGo
  • Added Package Information table to the Description sectionGo
  • Added Pin Functions tableGo
  • Added ESD Ratings tableGo
  • Added single supply specification to Recommended Operating Conditions Go
  • Added specified temperature range to Recommended Operating Conditions Go
  • Added VREF = 0V, VCM = VS/2, and G = 1 to "unless otherwise noted" conditions in Electrical Characteristics and Typical Characteristics for clarityGo
  • Changed parameter from "Offset voltage vs Temperature" to "Offset voltage drift" in Electrical Characteristics Go
  • Added test condition of "TA = –40°C to +85°C" for "Offset voltage drift" in Electrical Characteristics Go
  • Changed parameter from "Offset Voltage vs Power Supply" to "Power-supply rejection ratio" in Electrical Characteristics Go
  • Added test condition of "TA = –40°C to +85°C" for "CMRR" in Electrical Characteristics Go
  • Changed "Common-mode input impedance" typical value from 400kΩ to 200kΩ in Electrical Characteristics Go
  • Added test condition "TA = –40°C to +85°C" for "Gain error vs temperature" in Electrical Characteristics and renamed to "Gain error drift" for clarityGo
  • Changed "Gain nonlinearity" typical value from 0.0002% to 0.0005% in Electrical Characteristics Go
  • Added test condition "Continuous to VS/2" to Short-circuit current specification in Electrical Characteristics for clarityGo
  • Change minimum Slew rate from 2V/µs to 1.7V/µs in Electrical Characteristics Go
  • Deleted redundant voltage range, operating temperature range, and specification temperature range specifications from Electrical Characteristics Go
  • Deleted Reducing Differential Gain application circuit figure Go
  • Added Documentation Support and Related Documentation sectionsGo