SBVS034P September   2003  – April 2026 TPS731

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 Output Noise
      2. 6.3.2 Internal Current Limit
      3. 6.3.3 Enable Pin and Shutdown
      4. 6.3.4 Reverse Current
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation With 1.7V ≤ VIN ≤ 5.5V and VEN ≥ 1.7V
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input and Output Capacitor Requirements
        2. 7.2.2.2 Dropout Voltage
        3. 7.2.2.3 Transient Response
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Thermal Considerations
        2. 7.4.1.2 Power Dissipation
      2. 7.4.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 Spice Models
      2. 8.1.2 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

9 Revision History

Changes from Revision O (August 2025) to Revision P (April 2026)

  • Added silicon 5V output ground current specificationGo
  • Added silicon 5V output ground pin current at maximum load specificationGo

Changes from Revision N (December 2015) to Revision O (August 2025)

  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo
  • Changed entire document to align with current family formatGo
  • Added new silicon (M3) devices to documentGo
  • Added nomenclature distinguishing between new silicon and legacy silicon information throughout document Go
  • Changed Applications Go
  • Added new silicon DBV thermalsGo
  • Changed VFB typical valueGo
  • Added new silicon ground pin current specGo
  • Added new silicon shutdown current specGo
  • Added new silicon curves to Typical Characteristics sectionGo
  • Added VEN above 1.7V discussion to Enable Pin and Shutdown sectionGo
  • Added new silicon curves to Application Curves sectionGo
  • Changed Layout Guidelines sectionGo
  • Changed JEDEC low- and high-K boards to JEDEC boards in Power Dissipation sectionGo
  • Added Layout Example for the Fixed-Output Version (DBV Package) figure to Layout Examples Go
  • Changed Device Nomenclature Go