SCASE63 January   2025 SN54SC8T373-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Balanced CMOS 3-State Outputs
      2. 7.3.2 SCxT Enhanced Input Voltage
        1. 7.3.2.1 Up Translation
        2. 7.3.2.2 Down Translation
      3. 7.3.3 Clamp Diode Structure
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
    3. 8.3 Design Requirements
      1. 8.3.1 Power Considerations
      2. 8.3.2 Input Considerations
      3. 8.3.3 Output Considerations
    4. 8.4 Detailed Design Procedure
    5. 8.5 Application Curves
    6. 8.6 Power Supply Recommendations
    7. 8.7 Layout
      1. 8.7.1 Layout Guidelines
      2. 8.7.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.7 Timing Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER DESCRIPTION CONDITION VCC TA = 25°C -55°C to 125°C UNIT
MIN MAX MIN MAX
tH Hold time Data after LE↓ 1.2V ±0.2V 4 52 nS
tSU Setup time Data before LE↓ 1.2V ±0.2V 21 24 nS
tW Pulse duration LE high 1.2V ±0.2V 31 33 nS
tH Hold time Data after LE↓ 1.8V ±0.2V 3 4 nS
tSU Setup time Data before LE↓ 1.8V ±0.2V 8 9 nS
tW Pulse duration LE high 1.8V ±0.2V 13 15 nS
tH Hold time Data after LE↓ 2.5V ±0.2V 2 3 nS
tSU Setup time Data before LE↓ 2.5V ±0.2V 7 8 nS
tW Pulse duration LE high 2.5V ±0.2V 9 10 nS
tH Hold time Data after LE↓ 3.3V ±0.3V 2 3 nS
tSU Setup time Data before LE↓ 3.3V ±0.3V 6 7 nS
tW Pulse duration LE high 3.3V ±0.3V 8 9 nS
tH Hold time Data after LE↓ 5V ±0.5V 1 1.5 nS
tSU Setup time Data before LE↓ 5V ±0.5V 6 7 nS
tW Pulse duration LE high 5V ±0.5V 8 9 nS