SCASE67 January   2025 SN54SC8T374-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Balanced CMOS 3-State Outputs
      2. 7.3.2 SCxT Enhanced Input Voltage
        1. 7.3.2.1 Up Translation
        2. 7.3.2.2 Down Translation
      3. 7.3.3 Clamp Diode Structure
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Power Considerations
        2. 8.2.1.2 Input Considerations
        3. 8.2.1.3 Output Considerations
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Mechanical Data

5.7 Timing Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER DESCRIPTION CONDITION VCC TA = 25°C -55°C to 125°C UNIT
MIN MAX MIN MAX
tH Hold time Data after CLK↑ 1.2V ±0.2V 1 2 nS
tSU Setup time CLR inactive 1.2V ±0.2V 4 4.5 nS
tSU Setup time Data before CLK↑ 1.2V ±0.2V 51 59 nS
tW Pulse duration CLK high or low 1.2V ±0.2V 42 53 nS
tW Pulse duration CLR low 1.2V ±0.2V 6.5 7.5 nS
tH Hold time Data after CLK↑ 1.8V ±0.2V 1 2 nS
tSU Setup time CLR inactive 1.8V ±0.2V 4 4.5 nS
tSU Setup time Data before CLK↑ 1.8V ±0.2V 13 15 nS
tW Pulse duration CLK high or low 1.8V ±0.2V 13 15 nS
tW Pulse duration CLR low 1.8V ±0.2V 6.5 7.5 nS
tH Hold time Data after CLK↑ 2.5V ±0.2V 0.5 2 nS
tSU Setup time CLR inactive 2.5V ±0.2V 4 4.5 nS
tSU Setup time Data before CLK↑ 2.5V ±0.2V 10 11 nS
tW Pulse duration CLK high or low 2.5V ±0.2V 9 10 nS
tW Pulse duration CLR low 2.5V ±0.2V 6.5 7.5 nS
tH Hold time Data after CLK↑ 3.3V ±0.3V 1 1.5 nS
tSU Setup time CLR inactive 3.3V ±0.3V 2.5 3 nS
tSU Setup time Data before CLK↑ 3.3V ±0.3V 8 9 nS
tW Pulse duration CLK high or low 3.3V ±0.3V 9 9 nS
tW Pulse duration CLR low 3.3V ±0.3V 5 6.5 nS
tH Hold time Data after CLK↑ 5V ±0.5V 1 1.5 nS
tSU Setup time CLR inactive 5V ±0.5V 2 2.5 nS
tSU Setup time Data before CLK↑ 5V ±0.5V 7 7 nS
tW Pulse duration CLK high or low 5V ±0.5V 8 9 nS
tW Pulse duration CLR low 5V ±0.5V 5 5.5 nS