SCASE70 January   2025 SN54SC8T139-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Functional Block Diagram
    4. 7.4 Feature Description
      1. 7.4.1 Balanced CMOS Push-Pull Outputs
      2. 7.4.2 SCxT Enhanced Input Voltage
        1. 7.4.2.1 Up Translation
        2. 7.4.2.2 Down Translation
      3. 7.4.3 Clamp Diode Structure
    5. 7.5 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Power Considerations
        2. 8.2.1.2 Input Considerations
        3. 8.2.1.3 Output Considerations
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

7.1 Overview

The devices are designed for high- performance memory-decoding or data-routing applications requiring very short propagation delay times. In high-performance memory systems, these decoders can minimize the effects of system decoding. When employed with high-speed memories utilizing a fast enable circuit, the delay time of these decoders and the enable time of the memory usually are less than the typical access time of the memory. This means that the effective system delay introduced by the decoders is negligible.

The devices comprise two individual 2-line to 4-line decoders in a single package. The active-low enable (G) input can be used as a data line in demultiplexing applications. These decoders/demultiplexers feature fully buffered inputs, each of which represents only one normalized load to its driving circuit.