SCDS135E
September 2003 – December 2024
SN74CB3Q3257
PRODUCTION DATA
1
1
Features
2
Applications
3
Description
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Electrical Characteristics
5.6
Switching Characteristics, VCC = 2.5V
5.7
Switching Characteristics, VCC = 3.3V
5.8
Typical Characteristics
Parameter Measurement Information
6
Detailed Description
6.1
Overview
6.2
Functional Block Diagram
6.3
Feature Description
6.4
Device Functional Modes
Application and Implementation
7.1
Application Information
7.2
Typical Application
7.2.1
Design Requirements
7.2.2
Detailed Design Procedure
7.2.3
Application Curve
Power Supply Recommendations
7.3
Layout
7.3.1
Layout Guidelines
7.3.2
Layout Example
7
Device and Documentation Support
7.1
Documentation Support
7.1.1
Related Documentation
7.2
Receiving Notification of Documentation Updates
7.3
Support Resources
7.4
Trademarks
7.5
Electrostatic Discharge Caution
7.6
Glossary
8
Revision History
9
Mechanical, Packaging, and Orderable Information
1
Features
High-bandwidth data path (up to 500MHz)
5V Tolerant I/Os with device powered up or powered down
Low and flat on-state resistance (r
on
) characteristics over operating range (r
on
= 4Ω typical)
Rail-to-rail switching on data I/O ports
0- to 5V Switching with 3.3V V
CC
0- to 3.3V Switching with 2.5V V
CC
Bidirectional data flow with near-zero propagation delay
Low input and output capacitance minimizes loading and signal distortion (C
io(OFF)
= 3.5pF typical)
Fast switching frequency (f
OE
= 20MHz maximum)
Data and control inputs provide undershoot clamp diodes
Low power consumption (I
CC
= 0.7mA typical)
V
CC
Operating range from 2.3V to 3.6V
Data I/Os support 0- to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V)
Control inputs can be driven by TTL or 5V and 3.3V CMOS outputs
I
off
Supports partial-power-down mode operation
Latch-up performance exceeds 100mA Per JESD 78, class II
ESD Performance tested per JESD 22
2000V Human body model (A114-B, class II)
1000V Charged-device model (C101)
Supports both digital and analog applications: USB interface, differential signal interface, bus isolation, low-distortion signal gating
(1)
1.
For additional information regarding the performance characteristics of the CB3Q family, refer to the TI
CBT-C, CB3T, and CB3Q Signal-Switch Families
application report.