2 TLV61290 Benefits

Compared to the widely used TPS6128x series, the TLV61290 has achieved significant improvements in many aspects. A detailed comparison table is shown in Table 2-1

Compared with the TPS6128x series, the TLV61290 accepts a wider input‑voltage range, and its minimum input voltage after start‑up is as low as 2 V. This range matches the requirements of silicon‑anode batteries, which are now widely used in consumer‑electronics products such as smartphones and tablets. The application of this type of battery is gradually expanding. Compared to conventional batteries, this new type of battery is capable of providing energy even at low voltages (approximately 2.5 V or lower). A boost converter is required to step the battery voltage up to the level needed by the downstream load. This fully leverages the advantages of silicon anode batteries and extends battery life. A typical application is shown in Figure 2-1.

Because the TLV61290 employs a hysteresis current control scheme and adaptive compensation techniques, its load transient performance is significantly improved. For practical applications, the minimum operating voltage at TLV61290's output is fixed. If the device has better load transient performance, it can operate in bypass mode for longer periods. Compared to boost mode, TLV61290 has higher efficiency under bypass mode, which can reach approximately 99%. Therefore, this advantage can extend battery life by improving total efficiency.Figure 2-2 shows a specific example. Compared to the previous generation TPS61280x series, the TLV61290 can operate in bypass mode for a longer periods under the same conditions. (Test condition: Vin=2.7 V, Vout=3.4 V, Io=0 to 3A, slew rate=0.2A/μs)

In addition, the TLV61290 can achieve true disconnection, meaning that the input and output are completely isolated when the device is disabled. This characteristic is very important in applications where the system is sensitive to power consumption during device shutdown. In a conventional boost circuit, true disconnection generally cannot be achieved due to the presence of rectifier diodes or the body diode of the rectifier FET. However, the TLV61290 employs TI’s proprietary "switchable‑body‑diode NMOS FET" to replace rectifier FET, which achieves true disconnection function. The specific diagrams are shown in Figure 2-3.

When the output voltage is higher than the input voltage, the body diode orientation is as shown in Figure 2-4. Conversely, the body diode orientation is as shown in Figure 2-5.