SLAS975A November   2013  – August 2015 HD3SS6126

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics - Device Parameters
    6. 6.6 Electrical Characteristics - Signal Switch Parameters
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Power Supply
        2. 8.2.2.2 Differential Pairs
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply Voltage, VDD(2) –0.3 4 V
Voltage Differential I/O, High-bandwidth signal path: SSA0/1(p/n), SSB0/1(p/n), SSC0/1(p/n) –0.5 4 V
Differential I/O, Low-bandwidth signal path: HSAp/n), HSB(p/n), HSC(p/n) -0.5 7
Control pin and single ended I/O –0.3 VDD + 0.3
Continuous power dissipation See Thermal Information
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential voltages, are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

typical values for all parameters are at VCC = 3.3 V and TA = 25°C; all temperature limits are specified by design
MIN NOM MAX UNIT
VDD Supply voltage 3.0 3.3 3.6 V
VIH Input high voltage Control Pins 2.0 VDD V
VIL Input low voltage Control Pins –0.1 0.8 V
VI/O_Diff Differential voltage Switch I/O differential voltage for High-bandwidth signal path only: SSA0/1(p/n), SSB0/1(p/n), SSC0/1(p/n) 0 1.8 Vp-p
VI/O_CM Common voltage Switch I/O common mode voltage for High-bandwidth signal path only: SSA0/1(p/n), SSB0/1(p/n), SSC0/1(p/n) 0 2.0 V
TA Operating free-air temperature 0 70 °C

6.4 Thermal Information

THERMAL METRIC HD3SS6126 UNIT
RUA (WQFN)
42 PINS
RθJA Junction-to-ambient thermal resistance 53.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 38.2 °C/W
RθJB Junction-to-board thermal resistance 27.4 °C/W
ψJT Junction-to-top characterization parameter (1) 5.6 °C/W
ψJB Junction-to-board characterization parameter (1) 27.3 °C/W
(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics application report, SPRA953. Test conditions for ΨJB and ΨJT are clarified in the application report..

6.5 Electrical Characteristics – Device Parameters

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ICC Supply current VDD = 3.6 V, SEL = VDD /GND; OE = GND; Outputs Floating 2.4 3 mA
SEL
IIH Input high current VDD = 3.6 V, VIN = VDD 95 µA
IIL Input high current VDD = 3.6 V, VIN = GND 1 µA
HS_OE
IIH Input high current VDD = 3.6 V, VIN = VDD 1 µA
IIL Input high current VDD = 3.6 V, VIN = GND 1 µA
SSA0/1, SSB0/1, SSC0/1
ILK High-impedance leakage current VDD = 3.6 V, VIN = 2 V, VOUT= 2 V,
(ILK on open outputs Port B and C)		 130 µA
VDD = 3.6 V, VIN = 2 V, VOUT= 2 V,
(ILK on open outputs Port A)		 4
HSA, HSB, HSC
ILK High-impedance leakage current VDD = 3.6 V, VIN = 0 V, VOUT= 0 V to 4 V,
HS_OE_IN = GND		 1 µA

6.6 Electrical Characteristics – Signal Switch Parameters

under recommended operating conditions; RL, RSC = 50 Ω, CL = 10 pF (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SSA0/1(p/n), SSB0/1(p/n), SSC0/1(p/n) Signal Path
CON Outputs ON capacitance VIN = 0 V, outputs open, switch ON 1.5 pF
COFF Outputs OFF capacitance VIN = 0 V, outputs open, switch OFF 1 pF
RON Output ON resistance VDD = 3.3 V, VCM = 0 V – 2 V,
IO = –8 mA		 5 8 Ω
ΔRON ON resistance match between pairs of the same channel VDD = 3.3 V; 0 V ≤ VIN ≤ 2 V;
IO = –8 mA		 0.7 Ω
RFLAT_ON ON resistance flatness
(RON(MAX)– RON(MIN)		 VDD = 3.3 V; –0 V ≤ VIN ≤ 2 V 1.15 Ω
RL Differential return loss
(VCM = 0 V)		 f = 0.3 MHz –25 dB
f = 2.5 GHz –11
f = 4 GHz –11
XTALK Differential crosstalk
(VCM = 0 V)		 f = 0.3 MHz -85 dB
f = 2.5 GHz –35
f = 4 GHz –33
OIRR Differential off-isolation
(VCM = 0 V)		 f = 0.3 MHz -85 dB
f = 2.5 GHz -23
f = 4 GHz –21
IL Differential insertion loss
(VCM = 0 V)		 f = 0.3 MHz –0.43 dB
f = 2.5 GHz –1.1
f = 4 GHz –1.3
BW Bandwidth At –3 dB 10 GHz
HSA(p/n), HSB(p/n), HSC(p/n) SIGNAL PATH
CON Outputs ON capacitance VIN = 0 V, Outputs Open, Switch ON 6 7.5 pF
COFF Outputs OFF capacitance VIN = 0 V, Outputs Open, Switch OFF 3.5 6 pF
RON Output ON resistance VDD = 3 V, VIN = 0 V,
IO = 30 mA		 3 6 Ω
VDD = 3 V, VIN = 2.4 V,
IO = 30 mA		 3.4 6
ΔRON ON resistance match between pairs of the same channel VDD = 3 V; VIN = 0 V;
IO = 30 mA		 0.2 Ω
VDD = 3 V; VIN = 1.7 V;
IO = -15 mA		 0.2
RFLAT_ON ON resistance flatness
(RON(MAX)– RON(MIN )		 VDD = 3 V; VIN = 0 V;
IO = 30 mA		 1 Ω
VDD = 3 V; VIN = 1.7 V;
IO = –15 mA		 1
XTALK Differential crosstalk (VCM = 0 V) RL = 50 Ω, f = 250 MHz –40 dB
OIRR Differential off-isolation (VCM = 0 V) RL = 50 Ω, f = 250 MHz –41 dB
BW Bandwidth RL = 50 Ω 0.9 GHz
(1) Specified by design

6.7 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SSA0/1(p/n), SSB0/1(p/n), SSC0/1(p/n) Signal Path
ton SEL-to-Switch ton RSC and RL = 50 Ω, See Figure 1 70 250 ns
toff SEL-to-Switch toff RSC and RL = 50 Ω, See Figure 1 70 250 ns
tPD Switch propagation delay RSC and RL = 50 Ω, See Figure 3 85 ps
tSK(O) Interpair output skew (CH-CH) RSC and RL = 50 Ω, See Figure 3 20 ps
tSK(b-b) Intrapair Output Skew (bit-bit) RSC and RL = 50 Ω, See Figure 3 8 ps
HSA(p/n), HSB(p/n), HSC(p/n) SIGNAL PATH
tON SEL to Switch tON See Figure 2 30 ns
HS_OE to Switch tON See Figure 2 17
tOFF SEL to Switch tOFF See Figure 2 12 ns
HS_OE to Switch tOFF See Figure 2 10
tPD(1) Switch propagation delay See Figure 3 250 ps
tSK(O)(1) Interpair output skew (CH-CH) 100 200 ps
tSK(P)(1) Intrapair Output Skew (bit-bit) 100 200 ps
HD3SS6126 td_1_SLAS975.gifFigure 1. Select to Switch tON and tOFF
HD3SS6126 pmi_ton_toff_las975.gifFigure 2. Turnon (tON) and Turnoff Time (tOFF)
HD3SS6126 dg_por_del_ske_SLAS975.gifFigure 3. Propagation Delay and Skew

6.8 Typical Characteristics

HD3SS6126 D001_SLAS975.gifFigure 4. Intrapair Skew SSA to SSB Port
HD3SS6126 D002_SLAS975.gifFigure 5. Intrapair Skew SSA to SSC Port