SLLK026B November   2019  – April 2022 LMX2694-SEP

 

  1.   Trademarks
  2. 1Texas Instruments Enhanced Product Qualification and Reliability Report
  3. 2Space Enhanced Plastic Production Flow
  4. 3Device Qualification
  5. 4Outgas Test Report
  6. 5Revision History

Device Qualification

The following is the device qualification summary:

Qualification by Similarity (Qualification Family)

A new device can be qualified either by performing full scale quality and reliability tests on the actual device or using a previously qualified device or devices through "Qualification by Similarity" (QBS) rules. By establishing similarity between the new device and those qualified previously, repetitive tests will be eliminated, allowing for timely production release. When adopting QBS methodology, the emphasis is on qualifying the differences between a previously qualified product and the new product under consideration.

The QBS rules for a technology, product, test parameters, or package shall define which attributes are required to remain fixed in order for the QBS rules to apply. The attributes which are expected and allowed to vary will be reviewed and a QBS plan shall be developed, based on the reliability impact assessment above, specifying what subset of the full complement of environmental stresses is required to evaluate the reliability impact of those variations. Each new device shall be reviewed for conformance to the QBS rule sets applicable to that device. See JEDEC JESD47 for more information.

Table 3-1 Device Baseline
TI DEVICELMX2694SRTCTSEPASSEMBLY SITETI-MLA (MALAYSIA)
DLA VIDV62/19616-02XETest SiteTI PHILIPPINES CLARK A/T
Wafer FabTexas Instruments Deutschland- FFAB (Freising)Pin/Package TypeVQFNP (RTC) 48
Fab ProcessBICMOS13LeadframeCu
Fab TechnologyCMOSTermination FinishNiPdAu-Ag
ESD HBM±1000 VBond Wire25.4 µm Au
ESD CDM±1000 VMoisture SensitivityMSL 3/260°C
Baseline information in effect as of the date of this report
Table 3-2 Space Enhanced Products New Device Qualification Matrix
Note that qualification by similarity (“qualification family”) per JEDEC JESD47 is allowed
DESCRIPTIONCONDITIONSAMPLE SIZE USED/REJECTSLOTS REQUIREDTEST METHOD
ElectromigrationMaximum Recommended Operating ConditionsN/AN/APer TI Design Rules
Wire Bond LifeMaximum Recommended Operating ConditionsN/AN/APer TI Design Rules
Electrical CharacterizationTI Data Sheet103N/A
Electrostatic Discharge SensitivityHBM3 units/voltage1EIA/JESD22-A114
CDMEIA/JESD22-C101
Latch-upPer Technology6/01EIA/JESD78
Physical DimensionsTI Data Sheet5/01EIA/JESD22- B100
Thermal ImpedanceTheta-JA on boardPer Pin-PackageN/AEIA/JESD51
Bias Life Test125°C/1000 hours or equivalent77/03JESD22-A108*
Biased HAST130°C/85%/96 hours77/03JESD22-A110*
Unbiased HAST130°C/85%/96 hours77/03JESD22-A.118*
Temperature Cycle-65°C to +150°C non-biased for 500 cycles77/03JESD22-A104*
Solder Heat260°C for 10 seconds22/01JESD22-B106
Resistance to SolventsInk symbol only12/01JESD22-B107
SolderabilityCondition A (steam age for 8 hours)22/01ANSI/J-STD-002-92
FlammabilityMethod A/Method B5/01UL-1964
Bond ShearPer wire size5 units x 30/0 bonds3JESD22-B116
Bond Pull StrengthPer wire size5 units x 30/0 bonds3ASTM F-459
Die ShearPer die size5/03TM 2019
High Temp Storage150°C/1,000 hours15/03JESD22-A103-A*
Moisture SensitivitySurface Mount Only121J-STD-020-A*
Radiation Response CharacterizationTotal Ionization Dose, and Single-Event Latchup5 units/dose level1MIL-STD-883/Method 1019
Outgassing CharacterizationTML (Total Mass Lost), CVCM (Collected Volatile Condensable material), WVR (Water vapor recorded)51ASTM E595
Single-Event (SEE)Single Event (SEL)51MIL-STD-883/Method 1019
Radiation Response Characterization (TID)Total Ionization Dose2 units/per wafer qualification1MIL-STD-883/Method 1019
*Precondition performed per JEDEC Std. 22, Method A112/A113