SLOS629D July 2010 – October 2016 DRV8601
PRODUCTION DATA.
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VDD | Supply voltage | –0.3 | 6 | V |
| VI | Input voltage, INx, EN | –0.3 | VDD + 0.3 | V |
| Output continuous total power dissipation | See Thermal Information | |||
| TA | Operating free-air temperature | –40 | 85 | °C |
| TJ | Operating junction temperature | –40 | 150 | °C |
| Tstg | Storage temperature | –65 | 150 | °C |
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 | |||
| MIN | NOM | MAX | UNIT | |||
|---|---|---|---|---|---|---|
| VDD | Supply voltage | 2.5 | 5.5 | V | ||
| VIH | High-level input voltage | EN | 1.15 | V | ||
| VIL | Low-level input voltage | EN | 0.5 | V | ||
| TA | Operating free-air temperature | –40 | 85 | °C | ||
| ZL | Load impedance | 6.4 | Ω | |||
| THERMAL METRIC(1) | DRV8601 | UNIT | ||
|---|---|---|---|---|
| DRB | ZQV | |||
| 8 PINS | 8 BALLS | |||
| RθJA | Junction-to-ambient thermal resistance | 52.8 | 78 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 63 | 155 | °C/W |
| RθJB | Junction-to-board thermal resistance | 28.4 | 65 | °C/W |
| ψJT | Junction-to-top characterization parameter | 2.7 | 5 | °C/W |
| ψJB | Junction-to-board characterization parameter | 28.6 | 50 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 11.4 | n/a | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| |VOO| | Output offset voltage (measured differentially) |
VI = 0 V, VDD = 2.5 V to 5.5 V | 9 | mV | |||
| VOD,N | Negative differential output voltage (VOUT+–VOUT–) |
VIN+ = VDD, VIN– = 0 V or VIN+ = 0 V, VIN– = VDD |
VDD = 5.0 V, Io = 400 mA | –4.55 | V | ||
| VDD = 3.3 V, Io = 300 mA | –2.87 | ||||||
| VDD = 2.5 V, Io = 200 mA | –2.15 | ||||||
| VOD,P | Positive differential output voltage (VOUT+–VOUT–) |
VIN+ = VDD, VIN– = 0 V or VIN+ = 0 V, VIN– = VDD |
VDD = 5.0 V, Io = 400 mA | 4.55 | V | ||
| VDD = 3.3 V, Io = 300 mA | 2.87 | ||||||
| VDD = 2.5 V, Io = 200 mA | 2.15 | ||||||
| |IIH| | High-level EN input current | VDD = 5.5 V, VI = 5.8 V | 1.2 | μA | |||
| |IIL| | Low-level EN input current | VDD = 5.5 V, VI = –0.3 V | 1.2 | μA | |||
| IDD(Q) | Supply current | VDD = 2.5 V to 5.5 V, No load, EN = VIH | 1.7 | 2 | mA | ||
| IDD(SD) | Supply current in shutdown mode | EN = VIL, VDD = 2.5 V to 5.5 V, No load | 0.01 | 0.9 | μA | ||
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| ZI | Input impedance | 2 | MΩ | |||
| ZO | Output impedance | Shutdown mode (EN = VIL) | >10 | kΩ | ||
| FIGURE | ||
|---|---|---|
| Output voltage (High) | vs Load current | Figure 1 |
| Output voltage (Low) | vs Load current | Figure 2 |
| Output voltage | vs Input voltage, RL = 10 Ω | Figure 3 |
| Output voltage | vs Input voltage, RL = 20 Ω | Figure 4 |
| Supply current | vs Supply voltage | Figure 5 |
| Shutdown supply current | vs Supply voltage | Figure 6 |
| Power dissipation | vs Supply voltage | Figure 7 |
| Slew rate | vs Supply voltage | Figure 8 |
| Output transition | vs Time | Figure 9, Figure 10 |
| Startup | vs Time | Figure 11 |
| Shutdown | vs Time | Figure 12 |