SLPS322E November   2012  – July 2026 CSD18532Q5B

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

4.2 Thermal Information

TA = 25°C unless otherwise stated
THERMAL METRICMINTYPMAXUNIT
RθJCJunction-to-case thermal resistance(1)0.8°C/W
RθJAJunction-to-ambient thermal resistance(1)(2)50°C/W
(1) RθJC is determined with the device mounted on a 1in2 (6.45cm2), 2oz. (0.071mm) thick Cu pad on a 1.5in × 1.5in (3.81cm × 3.81cm), 0.06in (1.52mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1in2 (6.45cm2), 2oz (0.071mm) thick Cu.
CSD18532Q5B
Maximum RθJA = 50°C/W when mounted on 1 in2 (6.45cm2) of 2oz (0.071mm) thick Cu.
CSD18532Q5B
Maximum RθJA = 125°C/W when mounted on a minimum pad area of 2oz (0.071mm) thick Cu.