SLPS484C January   2014  – May 2024 CSD19535KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Receiving Notification of Documentation Updates
    3. 5.3 Support Resources
    4. 5.4 Trademarks
    5. 5.5 Electrostatic Discharge Caution
    6. 5.6 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

3 Description

This 100V, 3.1mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD19535KCS CSD19535KCS
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10V) 78 nC
Qgd Gate Charge Gate to Drain 13 nC
RDS(on) Drain-to-Source On Resistance VGS = 6V 3.4 mΩ
VGS = 10V 3.1 mΩ
VGS(th) Threshold Voltage 2.7 V
Ordering Information
Device Package(1) Media Qty Ship
CSD19535KCS TO-220 Plastic Package Tube 50 Tube
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 150 A
Continuous Drain Current (Silicon limited), TC = 25°C 187
Continuous Drain Current (Silicon limited), TC = 100°C 133
IDM Pulsed Drain Current (1) 400 A
PD Power Dissipation 300 W
TJ, Tstg Operating Junction and
Storage Temperature Range		 –55 to 175 °C
EAS Avalanche Energy, single pulse
ID = 95A, L = 0.1mH, RG = 25Ω		 451 mJ
(1) Max RθJC = 0.5°C/W, pulse duration ≤100μs, duty cycle ≤1%
CSD19535KCS RDS(on) vs VGSRDS(on) vs VGS
CSD19535KCS Gate ChargeGate Charge