SLPS530A January   2015  – December 2024 CSD19534KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

3 Description

This 100V, 13.7mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD19534KCS CSD19534KCS
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10V) 16.4 nC
Qgd Gate Charge Gate-to-Drain 3.3 nC
RDS(on) Drain-to-Source On-Resistance VGS = 6V 16.3 mΩ
VGS = 10V 13.7 mΩ
VGS(th) Threshold Voltage 2.8 V
Ordering Information(1)
Device Package Media Qty Ship
CSD19534KCS TO-220 Plastic Package Tube 50 Tube
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 100 A
Continuous Drain Current (Silicon limited), TC = 25°C 54
Continuous Drain Current (Silicon limited), TC = 100°C 38
IDM Pulsed Drain Current (1) 138 A
PD Power Dissipation 118 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 175 °C
EAS Avalanche Energy, single pulse
ID = 33A, L = 0.1mH, RG = 25Ω		 54 mJ
(1) Max RθJC = 1.3°C/W, pulse duration ≤100μs, duty cycle ≤1%
CSD19534KCS RDS(on) vs VGS RDS(on) vs VGS
CSD19534KCS Gate Charge Gate Charge