SLPS539C September   2014  – May 2025 CSD19535KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Receiving Notification of Documentation Updates
    3. 5.3 Support Resources
    4. 5.4 Trademarks
    5. 5.5 Electrostatic Discharge Caution
    6. 5.6 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

4.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

CSD19535KTT Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD19535KTT Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD19535KTT Transfer Characteristics
VDS = 5V
Figure 4-3 Transfer Characteristics
CSD19535KTT Gate Charge
VDS = 50VID = 100A
Figure 4-4 Gate Charge
CSD19535KTT Threshold Voltage vs Temperature
ID = 250µA
Figure 4-6 Threshold Voltage vs Temperature
CSD19535KTT Normalized On-State Resistance vs Temperature
ID = 100A
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD19535KTT Maximum Safe Operating Area
Single pulse, max RθJC = 0.5°C/W
Figure 4-10 Maximum Safe Operating Area
CSD19535KTT Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD19535KTT Capacitance
Figure 4-5 Capacitance
CSD19535KTT On-State Resistance vs Gate-to-Source Voltage
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD19535KTT Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD19535KTT Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching