SLPS589A March   2016  – June 2025 CSD18535KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4.   Description
  5. 3Specifications
    1. 3.1 Electrical Characteristics
    2. 3.2 Thermal Information
    3. 3.3 Typical MOSFET Characteristics
  6. 4Device and Documentation Support
    1. 4.1 Third-Party Products Disclaimer
    2. 4.2 Receiving Notification of Documentation Updates
    3. 4.3 Support Resources
    4. 4.4 Trademarks
    5. 4.5 Electrostatic Discharge Caution
    6. 4.6 Glossary
  7. 5Revision History
  8. 6Mechanical, Packaging, and Orderable Information

3.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0V, ID = 250μA60V
IDSSDrain-to-source leakage currentVGS = 0V, VDS = 48V1μA
IGSSGate-to-source leakage currentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, ID = 250μA1.41.92.4V
RDS(on)Drain-to-source on-resistanceVGS = 4.5V, ID = 100A2.32.9mΩ
VGS = 10V, ID = 100A1.62.0mΩ
gfsTransconductanceVDS = 6V, ID = 100A263S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0V, VDS = 30V, ƒ = 1 MHz50906620pF
CossOutput capacitance8901150pF
CrssReverse transfer capacitance2431pF
RGSeries gate resistance0.81.6Ω
QgGate charge total (10V)VDS = 30V, ID = 100A6381nC
QgdGate charge gate-to-drain10.4nC
QgsGate charge gate-to-source15.7nC
Qg(th)Gate charge at Vth9.4nC
QossOutput chargeVDS = 30V, VGS = 0V140nC
td(on)Turn on delay timeVDS = 30V, VGS = 10V,
IDS = 100A, RG = 0Ω		9ns
trRise time3ns
td(off)Turn off delay time19ns
tfFall time3ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = 100A, VGS = 0V0.91.0V
QrrReverse recovery chargeVDS= 30V, IF = 100A,
di/dt = 300A/μs		214nC
trrReverse recovery time63ns