SLPS590B March   2016  – June 2024 CSD18542KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

3 Description

This 60V, 3.3mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD18542KTT
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10V) 44 nC
Qgd Gate Charge Gate-to-Drain 6.9 nC
RDS(on) Drain-to-Source On Resistance VGS = 4.5V 4.0 mΩ
VGS = 10V 3.3
VGS(th) Threshold Voltage 1.8 V
Device Information(1)
DEVICEQTYMEDIAPACKAGESHIP
CSD18542KTT50013-Inch ReelD2PAK
Plastic Package		Tape and Reel
CSD18542KTTT50
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°CVALUEUNIT
VDSDrain-to-Source Voltage60V
VGSGate-to-Source Voltage±20V
IDContinuous Drain Current (Package Limited)200A
Continuous Drain Current (Silicon Limited), TC = 25°C170
Continuous Drain Current (Silicon Limited), TC = 100°C120
IDMPulsed Drain Current(1)400A
PDPower Dissipation250W
TJ,
Tstg		Operating Junction,
Storage Temperature		–55 to 175°C
EASAvalanche Energy, Single Pulse
ID = 75A, L = 0.1mH, RG = 25Ω		281mJ
(1) Max RθJC = 0.6°C/W, pulse duration ≤ 100μs, duty cycle ≤ 1%.
CSD18542KTT RDS(on) vs VGS RDS(on) vs VGS
CSD18542KTT Gate Charge Gate Charge