SLVK155 September   2023 TPS7H2201-SEP

PRODUCTION DATA  

  1.   1
  2.   TPS7H2201-SEP Neutron Displacement Damage (NDD) Characterization
  3.   Trademarks
  4. 1Overview
  5. 2Test Procedures
  6. 3Facility
  7. 4Results
    1. 4.1 Data Sheet Electrical Parameters and Associated Tests
  8.   A Appendix: NDD Report Data

1 Overview

The TPS7H2201-SEP is a radiation-tolerant single channel eFuse that provides configurable rise time to minimize inrush current and reverse current protection. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5 V to 7 V and can support a maximum continuous current of 6 A. The switch is controlled by an on and off input (EN), which can interface directly with low-voltage control signals.

The TPS7H2201-SEP is available in a ceramic and plastic package with integrated thermal pad allowing for high power dissipation. The device is characterized for operation over the free-air temperature range of –55°C to +125°C.

Table 1-1 Overview Information
TI Part NumberTPS7H2201-SEP
VID NumberV62/23608
Device NamePTPS7H2201MDAPSEP
Device FunctionLoad switch and eFuse
TechnologyLinear BiCMOS 7 (LBC7)
Assembly Lot Number and Lot Trace Code3113808 / 32AHRTK
Unbiased Quantity Tested9
Exposure FacilityVPT Rad
Neutron Fluence (1-MeV equivalent)1.0 × 1012, 5.0 × 1012, 1.0 × 1013 n/cm2
Irradiation TemperatureRoom temperature
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