SLVK263 May   2026 TPS7H5030-SP , TPS7H5031-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

5 LETEFF and Range Calculation

TPS7H5030-SP Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H503x-SP [Left] and MSU Stack-Up Calculator Application Used to Determine Key Ion Parameters [Right]Figure 5-1 Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H503x-SP [Left] and MSU Stack-Up Calculator Application Used to Determine Key Ion Parameters [Right]

The TPS7H503x-SP is fabricated in the TI Linear BiCMOS 250nm process with a back-end-of-line (BEOL) stack consisting of four levels of standard thickness aluminum. Figure 5-1 shows the total stack height from the surface of the passivation to the silicon surface is 10.9μm based on nominal layer thickness.

Accounting for energy loss through the degrader, copper foil, beam port window, air gap, and the BEOL stack of the TPS7H503x-SP, the effective LET (LETEFF) at the surface of the silicon substrate and the range was determined with:

  • MSU Stack-Up Calculator (provided by MSU FRIB and based on latest SRIM-2013 [7] models)

The results are shown in Ion LETEFF and Range in Silicon.

Table 5-1 Ion LETEFF and Range in Silicon
FacilityBeam Energy (MeV/nucleon)Ion TypeDegrader Steps (#)Degrader Angle (°)Copper Foil Width (μm)Beam Port WindowAir Gap (mm)Angle of IncidenceLETEFF (MeV×cm2/mg)Range in Silicon (μm)
KSEE19.5169Tm--53-mil PEN60074.9790.4