SLVK361 October   2026 ADC168M102R-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Summary
  13. 10References

9 Summary

The purpose of this study was to characterize the effect of heavy-ion irradiation on the single-event effect (SEE) performance of the ADC168M102R-SP dual, 16-bit, 1MSPS analog-to-digital converter (ADC). Heavy-ions with LETEFF = 48, 65 and 75MeV×cm2/mg were used for the SEE characterization campaign. Flux of ≈105 ions/cm2 ·s and fluence of ≈107 ions/cm2 per run were used for the characterization. The SEE results demonstrated that the ADC168M102R-SP is free of destructive SEL at LETEFF = 75MeVcm2/mg and across the full electrical specifications. Transients at LETEFF = 48 to 75MeV×cm2 /mg on SDO are presented and discussed.