SLVS413L October   2002  – August 2026 TPS61040 , TPS61041

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Peak Current Control
      2. 6.3.2 Soft Start
      3. 6.3.3 Enable
      4. 6.3.4 Undervoltage Lockout
      5. 6.3.5 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Operation
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Inductor Selection, Maximum Load Current
        2. 7.2.2.2 Setting the Output Voltage
        3. 7.2.2.3 Line and Load Regulation
        4. 7.2.2.4 Output Capacitor Selection
        5. 7.2.2.5 Input Capacitor Selection
        6. 7.2.2.6 Diode Selection
      3. 7.2.3 Application Curves
    3. 7.3 System Examples
    4. 7.4 Power Supply Recommendations
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
      2. 7.5.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Third-Party Products Disclaimer
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

6.3.5 Thermal Shutdown

An internal thermal shutdown is implemented and turns off the internal MOSFETs when the typical junction temperature of 168°C is exceeded. The thermal shutdown has a hysteresis of typically 25°C. This data is based on statistical means and is not tested during the regular mass production of the IC.