SLVS632L January   2006  – April 2026 TPS5430 , TPS5431

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information (DDA Package)
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Oscillator Frequency
      2. 6.3.2  Voltage Reference
      3. 6.3.3  Enable (ENA) and Internal Slow Start
      4. 6.3.4  Undervoltage Lockout (UVLO)
      5. 6.3.5  Boost Capacitor (BOOT)
      6. 6.3.6  Output Feedback (VSENSE) and Internal Compensation
      7. 6.3.7  Voltage Feed-Forward
      8. 6.3.8  Pulse-Width-Modulation (PWM) Control
      9. 6.3.9  Overcurrent Limiting
      10. 6.3.10 Overvoltage Protection
      11. 6.3.11 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Operation near Minimum Input Voltage
      2. 6.4.2 Operation With ENA control
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 12V Input to 5.0V Output
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Custom Design With WEBENCH® Tools
          2. 7.2.1.2.2 Switching Frequency
          3. 7.2.1.2.3 Input Capacitors
          4. 7.2.1.2.4 Output Filter Components
            1. 7.2.1.2.4.1 Inductor Selection
            2. 7.2.1.2.4.2 Capacitor Selection
          5. 7.2.1.2.5 Output Voltage Set-Point
          6. 7.2.1.2.6 BOOT Capacitor
          7. 7.2.1.2.7 Catch Diode
          8. 7.2.1.2.8 Advanced Information
            1. 7.2.1.2.8.1 Output Voltage Limitations
            2. 7.2.1.2.8.2 Internal Compensation Network
            3. 7.2.1.2.8.3 Thermal Calculations
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Wide Input Voltage Ranges With TPS5430
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
        3. 7.2.2.3 Wide Input Voltage Ranges with TPS5431
          1. 7.2.2.3.1 Design Requirements
          2. 7.2.2.3.2 Detailed Design Procedure
      3. 7.2.3 Circuit Using Ceramic Output Filter Capacitors
        1. 7.2.3.1 Design Requirements
        2. 7.2.3.2 Detailed Design Procedure
          1. 7.2.3.2.1 Output Filter Component Selection
          2. 7.2.3.2.2 External Compensation Network
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Third-Party Products Disclaimer
      2. 8.1.2 Development Support
        1. 8.1.2.1 Custom Design With WEBENCH® Tools
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

4 Pin Configuration and Functions

TPS5430 TPS5431 DDA Package8-Pin HSOIC With Thermal Pad(Top View)Figure 4-1 DDA Package8-Pin HSOIC With Thermal Pad(Top View)
Table 4-1 Pin Functions
PIN TYPE(1) DESCRIPTION
NAME NO.
BOOT 1 O Boost capacitor for the high-side FET gate driver. Connect 0.01μF low ESR capacitor from BOOT pin to PH pin.
NC 2, 3 — Not connected internally.
VSENSE 4 I Feedback voltage for the regulator. Connect to output voltage divider.
ENA 5 I On and off control. Below 0.5V, the device stops switching. Above 1.3V, the device starts switching. ENA can be left floating. This pin is internally connected to a 1.5MΩ pullup resistor. Do not connect this pin with a resistor to ground.
GND 6 — Ground. Connect to DAP.
VIN 7 — Input supply voltage. Bypass VIN pin to GND pin close to device package with a high quality, low ESR ceramic capacitor. Place the bypass capacitor within 1mm of the Vin pin and within 1mm of the GND pin.
PH 8 I Source of the high side power MOSFET. Connected to external inductor and diode.
DAP — GND pin must be connected to the exposed pad for proper operation.
(1) I = input, O = output