SLVSAN3B December   2010  – November 2016 TPS61199

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Supply Voltage
      2. 7.3.2 Boost Controller
      3. 7.3.3 Switching Frequency
      4. 7.3.4 Enable and Undervoltage Lockout
      5. 7.3.5 Start-Up
      6. 7.3.6 Unused LED String
      7. 7.3.7 Program LED Full-Scale Current
      8. 7.3.8 PWM Dimming
      9. 7.3.9 Drive High Current LED
    4. 7.4 Device Functional Modes
      1. 7.4.1 Protection
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Inductor Selection
        2. 8.2.2.2 Schottky Diode
        3. 8.2.2.3 Switch MOSFET and Gate Driver Resistor
        4. 8.2.2.4 Current Sense and Current Sense Filtering
        5. 8.2.2.5 Output Capacitor
        6. 8.2.2.6 Loop Consideration
      3. 8.2.3 Application Curves
      4. 8.2.4 Additional Application Circuits
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Consideration
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage Pin VIN(2) –0.3 33 V
Pin IFB1 to IFB8(2) –0.3 30
Pin EN and PWM(2) –0.3 20
Pin ISET, ISNS and OVP(2) –0.3 3.6
All other pins(2) –0.3 7
Continuous power dissipation SeeThermal Information
Operating junction temperature –40 150 °C
Storage temperature, Tstg –65 50 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control procedures.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN NOM MAX UNIT
Inductor, L1 10 22 47 µH
Input capacitor, C1 10 µF
Output capacitor, C2 10 33 100 µF
PWM dimming frequency, ƒPWM 0.1 22 KHz
Rising/falling edge of PWM signal, tPWM 1 µsec
Boost regulator switching frequency, fBOOST 300 800 kHz
Operating ambient temperature, TA –40 85 °C
(1) Customers must verify the component values in their application if the values are different from the recommended values.

6.4 Thermal Information

THERMAL METRIC(1) TPS61199 TPS61199 UNITS
NS (SO) PWP (HTSSOP)
20 PINS 20 PINS
RθJA Junction-to-ambient thermal resistance 69.4 46.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 36.4 48.2 °C/W
RθJB Junction-to-board thermal resistance 37.3 22.1 °C/W
ψJT Junction-to-top characterization parameter 11.0 3.4 °C/W
ψJB Junction-to-board characterization parameter 36.8 13.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a 2.3 °C/W
(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

6.5 Electrical Characteristics

VIN = 12 V; TA = –40°C to +85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VIN Input voltage range 8 30 V
VUVLO_VIN Undervoltage lockout threshold VIN falling 6.5 7 V
VVIN_SYS VIN hysteresis VIN rising 300 mV
IQ_VIN Operating quiescent current into VIN EN = high; PWM = low;
no switching, VIN = 30 V 		1.5 mA
ISD Shutdown current 10 µA
VDD Internal regulation voltage Output current of VDD = 15 mA 5.7 6 6.3 V
EN and PWM
VH Logic high threshold on EN, PWM VIN = 8 V to 30 V 2 V
VL Logic low threshold on EN, PWM VIN = 8 V to 30 V 0.8 V
RPD Pulldown resistor on EN, PWM 400 800 1600 kΩ
CURRENT REGULATION
VISET ISET pin voltage 1.204 1.229 1.253 V
KISET Current multiple IIFB(AVG) / ISET IISET = 30 µA; IFB = 450 mV 1990
IFB Current accuracy to IIFB(AVG) IISET = 30 µA; IFB = 450 mV –2% 2%
IFB(BR)(1) Current matching IISET= 30 µA; IFB = 450 mV 3%
IFBleak IFB pin leakage current IFB voltage = 30 V; PWM = low 10 25 45 µA
IIFB_max Current sink max output current IFB = 450 mV 70 mA
OSCILLATOR
ƒOSC Switching frequency R = 100 kΩ 0.66 0.8 0.94 MHz
R = 160 kΩ 0.44 0.5 0.56
VFSW FSW pin reference voltage 1.229 V
Dutymax Maximum duty cycle FSW = 500 kHz 90% 94%
tskip Minimum pulse width for skip cycle mode 200 ns
GATE DRIVER and OVERCURRENT LIMIT
RGDRV(SRC) Gate driver impedance when sourcing VGDRV = 6 V, IGDRV = 20 mA 2 Ω
RGDRV(SNK) Gate driver impedance when sinking VGDRV = 6 V, IGDRV = 20 mA 1.5 Ω
VISNS Switch current limit detection threshold VIN = 8 V to 30 V 120 160 180 mV
PROTECTION
VCLAMP Output overvoltage threshold at OVP pin 2.77 2.95 3.13 V
IFBP LED short across protection bias current multiple IFBP/IISET VFBP = 1 V 0.23 0.25 0.27
VOVP_IFB IFB overvoltage threshold 26.5 29.5 V
THERMAL SHUTDOWN
Tshutdown Thermal shutdown threshold 150 °C
(1) Current matching = (IMAX – IMIN) / IAVG

6.6 Typical Characteristics

Typical Application as test circuit, and L = CDRH127/HPNP- 220M, R6 = 41kΩ, unless otherwise noted
DESCRIPTION FIGURES
Dimming linearity 17 LEDs in series; VIN = 12 V Figure 1
Dimming with short on time 17 LEDs in series; VIN = 12 V Figure 2
Current matching 17 LEDs in series; VIN = 12 V Figure 3
Dimming waveform 17 LEDs in series; VIN = 12 V; 200 Hz with 1% duty cycle Figure 4
Dimming waveform 17 LEDs in series; VIN = 12 V; 22 kHz with 5% duty cycle Figure 5
Startup waveform 17 LEDs in series; VIN = 12 V; 200 Hz with 50% duty cycle Figure 6
Shutdown waveform 17LEDs in series; VIN = 12 V; 200 Hz with 50% duty cycle Figure 7
Dimming efficiency 17 LEDs in series; 200 Hz dimming frequency Figure 9
Dimming efficiency 13 LEDs in series; 200 Hz dimming frequency Figure 10
TPS61199 cur1_PWM_lvsan3.gif Figure 1. Dimming Linearity
TPS61199 LED1_cur_lvsan3.gif Figure 3. Current Matching
TPS61199 cur1_dimm_lvsan3.gif Figure 2. Dimming With Short On Time
TPS61199 scope1A_lvsan3.gif Figure 4. Dimming Waveforms
TPS61199 scope2_lvsan3.gif
Figure 5. Dimming Waveforms
TPS61199 scope4_lvsan3.gif
Figure 7. Shutdown Waveform
TPS61199 scope3_lvsan3.gif
Figure 6. Start-Up Waveform