SLVSE84D December   2017  – July 2021 TLV767

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
  7. Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 Output Enable
      2. 8.3.2 Dropout Voltage
      3. 8.3.3 Foldback Current Limit
      4. 8.3.4 Undervoltage Lockout (UVLO)
      5. 8.3.5 Output Pulldown
      6. 8.3.6 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Functional Mode Comparison
      2. 8.4.2 Normal Operation
      3. 8.4.3 Dropout Operation
      4. 8.4.4 Disabled
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Adjustable Device Feedback Resistors
      2. 9.1.2 Recommended Capacitor Types
      3. 9.1.3 Input and Output Capacitor Requirements
      4. 9.1.4 Reverse Current
      5. 9.1.5 Feed-Forward Capacitor (CFF)
      6. 9.1.6 Power Dissipation (PD)
      7. 9.1.7 Estimating Junction Temperature
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Transient Response
        2. 9.2.2.2 Choose Feedback Resistors
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary

Thermal Shutdown

The device contains a thermal shutdown protection circuit to disable the device when the junction temperature
(TJ) of the pass transistor rises to TSD(shutdown) (typical). Thermal shutdown hysteresis assures that the device resets (turns on) when the temperature falls to TSD(reset) (typical).

The thermal time-constant of the semiconductor die is fairly short, thus the device may cycle on and off when thermal shutdown is reached until power dissipation is reduced. Power dissipation during start up can be high from large VIN – VOUT voltage drops across the device or from high inrush currents charging large output capacitors. Under some conditions, the thermal shutdown protection disables the device before start up completes.

For reliable operation, limit the junction temperature to the maximum listed in the Recommended Operating Conditions table. Operation above this maximum temperature causes the device to exceed its operational specifications. Although the internal protection circuitry of the device is designed to protect against thermal overall conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device into thermal shutdown or above the maximum recommended junction temperature reduces long-term reliability.