SLVSER7 October   2020 TPS23731

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: DC-DC Controller Section
    6. 7.6 Electrical Characteristics PoE
    7.     14
    8. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  CLS Classification
      2. 8.3.2  DEN Detection and Enable
      3. 8.3.3  APD Auxiliary Power Detect
      4. 8.3.4  Internal Pass MOSFET
      5. 8.3.5  T2P and APDO Indicators
      6. 8.3.6  DC-DC Controller Features
        1. 8.3.6.1 VCC, VB, VBG and Advanced PWM Startup
        2.       27
        3. 8.3.6.2 CS, Current Slope Compensation and blanking
        4. 8.3.6.3 COMP, FB, EA_DIS, CP, PSRS and Opto-less Feedback
        5. 8.3.6.4 FRS Frequency Setting and Synchronization
        6. 8.3.6.5 DTHR and Frequency Dithering for Spread Spectrum Applications
        7. 8.3.6.6 SST and Soft-Start of the Switcher
        8. 8.3.6.7 SST, I_STP, LINEUV and Soft-Stop of the Switcher
      7. 8.3.7  Switching FET Driver - GATE
      8. 8.3.8  EMPS and Automatic MPS
      9. 8.3.9  VDD Supply Voltage
      10. 8.3.10 RTN, AGND, GND
      11. 8.3.11 VSS
      12. 8.3.12 Exposed Thermal pads - PAD_G and PAD_S
    4. 8.4 Device Functional Modes
      1. 8.4.1  PoE Overview
      2. 8.4.2  Threshold Voltages
      3. 8.4.3  PoE Start-Up Sequence
      4. 8.4.4  Detection
      5. 8.4.5  Hardware Classification
      6. 8.4.6  Maintain Power Signature (MPS)
      7. 8.4.7  Advanced Start-Up and Converter Operation
      8. 8.4.8  Line Undervoltage Protection and Converter Operation
      9. 8.4.9  PD Self-Protection
      10. 8.4.10 Thermal Shutdown - DC-DC Controller
      11. 8.4.11 Adapter ORing
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Detailed Design Procedure
          1. 9.2.1.1.1  Input Bridges and Schottky Diodes
          2. 9.2.1.1.2  Input TVS Protection
          3. 9.2.1.1.3  Input Bypass Capacitor
          4. 9.2.1.1.4  Detection Resistor, RDEN
          5. 9.2.1.1.5  Classification Resistor, RCLS.
          6. 9.2.1.1.6  APD Pin Divider Network, RAPD1, RAPD2
          7. 9.2.1.1.7  Setting Frequency (RFRS) and Synchronization
          8. 9.2.1.1.8  Bias Supply Requirements and CVCC
          9. 9.2.1.1.9  APDO, T2P Interface
          10. 9.2.1.1.10 Output Voltage Feedback Divider, RAUX, R1,R2
          11. 9.2.1.1.11 Frequency Dithering for Conducted Emissions Control
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 EMI Containment
    4. 11.4 Thermal Considerations and OTSD
    5. 11.5 ESD
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

8.3.6.5 DTHR and Frequency Dithering for Spread Spectrum Applications

The international standard CISPR 22 (and adopted versions) is often used as a requirement for conducted emissions. Ethernet cables are covered as a telecommunication port under section 5.2 for conducted emissions. Meeting EMI requirements is often a challenge, with the lower limits of Class B being especially hard. Circuit board layout, filtering, and snubbing various nodes in the power circuit are the first layer of control techniques. A more detailed discussion of EMI control is presented in Practical Guidelines to Designing an EMI Compliant PoE Powered Device With Isolated Flyback, SLUA469. Additionally, IEEE 802.3at sections 33.3 and 33.4 and IEEE 802.3bt sections 145.3 and 145.4 have requirements for noise injected onto the Ethernet cable based on compatibility with data transmission.

A technique referred to as frequency dithering can also be used to provide additional EMI measurement reduction. The switching frequency is modulated to spread the narrowband individual harmonics across a wider bandwidth, thus lowering peak measurements.

Fully programmable frequency dithering is a built-in feature of the TPS23731. The oscillator frequency can be dithered by connecting a capacitor from DTHR to RTN and a resistor from DTHR to FRS. An external capacitor, CDTR (Figure 9-1), is selected to define the modulation frequency fm. This capacitor is being continuously charged and discharged between slightly less than 0.5 V and slightly above 1.5 V by a current source/sink equivalent to ~3x the current through FRS pin. CDTR value is defined according to:

Equation 3. GUID-711AC9C0-1FED-4B51-8CC4-9C80F2C6A812-low.gif

fm should always be higher than 9 kHz, which is the resolution bandwidth applied during conducted emission measurement. Typically, fm should be set to around 11 kHz to account for component variations.

The resistor RDTR is used to determine ∆f, which is the amount of dithering, and its value is determined according to:

Equation 4. GUID-0A504883-9432-4139-9A00-125EEFF516AA-low.gif

For example, a 13.2% dithering with a nominal switching frequency of 250 kHz results in frequency variation of ±33 kHz.