SLVSH16B February   2024  – June 2025 ESD2CAN36-Q1 , ESD2CANFD36-Q1

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings - AEC Specification
    3. 5.3 ESD Ratings - IEC Specification
    4. 5.4 ESD Ratings - ISO Specification
    5. 5.5 Recommended Operating Conditions
    6. 5.6 Thermal Information
    7. 5.7 Electrical Characteristics
    8. 5.8 Typical Characteristics – ESD2CAN36-Q1
    9. 5.9 Typical Characteristics- ESD2CANFD36-Q1
  7. 6Application and Implementation
    1. 6.1 Application Information
  8. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

5.7 Electrical Characteristics

over TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS DEVICE MIN TYP MAX UNIT
VRWM Reverse stand-off voltage –36 36 V
VBRF Breakdown voltage(1) IIO = 10mA, IO to GND 37.8 40 44.2 V
VBRR IIO = –10mA, IO to GND –37.8 -40 –44.2 V
VCLAMP Clamping voltage(2) IPP = 1A, tp = 8/20µs, IO to GND ESD2CAN36-Q1 43 V
IPP = 4.3A, tp = 8/20µs, IO to GND ESD2CAN36-Q1 61 V
IPP = 1 A, tp = 8/20 µs, IO to GND ESD2CANFD36-Q1 47 V
IPP = 3.1A, tp = 8/20µs, IO to GND ESD2CANFD36-Q1 61 V
VCLAMP Clamping voltage(3) IPP = 16A, TLP, IO to GND or GND to IO ESD2CAN36-Q1 63 V
ESD2CANFD36-Q1 64 V
ILEAK Leakage current VIO = ±36V, IO to GND -50 5 50 nA
RDYN Dynamic resistance(3) IO to GND and GND to IO ESD2CAN36-Q1 0.49 Ω
ESD2CANFD36-Q1 0.49 Ω
CL Line capacitance(4) VIO = 0V, f = 1MHz, Vpp = 30mV ESD2CAN36-Q1 2.8 3.5 pF
ESD2CANFD36-Q1 2.6 2.9
(1) VBRF and VBRR are defined as the voltage when ±10mA is applied in the positive and negative going direction respectively, before the device latches into the snapback state
(2) Device stressed with 8/20μs exponential decay waveform according to IEC 61000-4-5
(3) Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008
(4) Measured from IO to GND on each channel