SLVSHX1 June   2025 TSD12-Q1 , TSD15-Q1 , TSD18-Q1 , TSD24-Q1 , TSD36-Q1

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings - AEC Specifications
    3. 5.3  ESD Ratings - IEC Specification
    4. 5.4  ESD Ratings - ISO Specifications
    5. 5.5  Recommended Operating Conditions
    6. 5.6  Thermal Information
    7. 5.7  Electrical Characteristics - TSD12-Q1
    8. 5.8  Electrical Characteristics - TSD15-Q1
    9. 5.9  Electrical Characteristics - TSD18-Q1
    10. 5.10 Electrical Characteristics - TSD24-Q1
    11. 5.11 Electrical Characteristics - TSD36-Q1
    12. 5.12 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
  8. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

5.10 Electrical Characteristics - TSD24-Q1

At TA=25℃ (unless otherwise noted) (1)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO <50nA, across operating temperature range 24 V
VBR Breakdown voltage IIO = 10mA, IO to GND 24.8 V
ILEAK Reverse leakage current VIO = 24V, IO to GND 2 20 nA
VFWD Forward voltage IIO = 10mA,  GND to IO 0.7 V
VCLAMP Surge clamping voltage, tp = 8/20µs (2) IPP = 1A, IO to GND 32 V
IPP = 5A, IO to GND 36 V
IPP = 9A, IO to GND 39 V
IPP = 9A, GND to IO 4 V
TLP clamping voltage, tp = 100ns IPP = 16A, IO to GND 33 V
IPP =16A, GND to IO 3 V
CL Line capacitance VIO = 0V;  ƒ = 1MHz, IO to GND 12 pF
(1) Typical parameters are measured at 25℃
(2) Nonrepetitive current pulse 8 to 20µs exponentially decaying waveform according to IEC 61000-4-5