SLVSKJ4 March   2026 LMG3670R010

PRODUCT PREVIEW  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Switching Parameters
      1. 6.1.1 Turn-On Times
      2. 6.1.2 Turn-Off Times
      3. 6.1.3 Drain-Source Turn-On and Turn-Off Slew Rate
      4. 6.1.4 Zero-Voltage Detection Times (LMG3676R010 only)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
      1. 7.2.1 LMG3670R010 Functional Block Diagram
      2. 7.2.2 LMG3671R010 Functional Block Diagram
      3. 7.2.3 LMG3676R010 Functional Block Diagram
      4. 7.2.4 LMG3677R010 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Drive Strength Adjustment
      2. 7.3.2 GaN Power FET Switching Capability
      3. 7.3.3 VDD Supply
      4. 7.3.4 Overcurrent and Short-Circuit Protection
      5. 7.3.5 Overtemperature Protection
      6. 7.3.6 UVLO Protection
      7. 7.3.7 Fault Reporting
      8. 7.3.8 Auxiliary LDO (LMG3671R010 Only)
      9. 7.3.9 Zero-Voltage Detection (ZVD) (LMG3676R010 Only)
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Slew Rate Selection
        2. 8.2.2.2 Signal Level-Shifting
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Using an Isolated Power Supply
      2. 8.3.2 Using a Bootstrap Diode
        1. 8.3.2.1 Diode Selection
        2. 8.3.2.2 Managing the Bootstrap Voltage
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
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1 Features

  • 650V 10mΩ GaN power FET with integrated gate driver
    • >200V/ns FET hold-off
    • 10V/ns to 80V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates with supply pin and input logic pin voltage range from 9V to 26V
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with <300ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • LMG3676R010 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
    • LMG3677R010 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
  • Top-side cooled 9.9mm × 12.3mm Slim TOLT (STOLT) package separates electrical and thermal paths for lowest power loop inductance