SLVSMI8 June   2026 SN74LVC1G17B-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5.   5
  6. 4 Pin Configuration and Functions
  7. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  8. 6 Parameter Measurement Information
  9. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Balanced CMOS Push-Pull Outputs
      2. 7.3.2 CMOS Schmitt-Trigger Inputs
      3. 7.3.3 Partial Power Down (Ioff)
      4. 7.3.4 Clamp Diode Structure
    4. 7.4 Device Functional Modes
  10. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Power Considerations
        2. 8.2.1.2 Input Considerations
        3. 8.2.1.3 Output Considerations
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  11. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  12. 10Revision History
  13. 11Mechanical, Packaging, and Orderable Information

8.1 Application Information

The device is a high-drive CMOS device that can be used for a multitude of buffer type functions where the input is slow or noisy. The device can produce 24mA of drive current at 3.3V, making it Ideal for driving multiple outputs and good for high-speed applications up to 100MHz. The inputs are 5.5V tolerant allowing it to translate down to VCC.