SNAS874C December   2024  – August 2026 LMR60440-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Enable and Undervoltage Lockout (UVLO)
      2. 7.3.2 Soft Start and Recovery from Dropout
      3. 7.3.3 Frequency Selection With RT
      4. 7.3.4 MODE/SYNC Pin Control
      5. 7.3.5 Output Voltage Selection
      6. 7.3.6 Current Limit
      7. 7.3.7 Hiccup Mode
      8. 7.3.8 Power-Good Function
      9. 7.3.9 Spread Spectrum
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown
      2. 7.4.2 Active Mode
        1. 7.4.2.1 Continuous Conduction Mode (CCM)
        2. 7.4.2.2 Auto Mode - Light Load Operation
        3. 7.4.2.3 FPWM Operation - Light Load Operation
        4. 7.4.2.4 Minimum On-Time
        5. 7.4.2.5 Dropout
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Switching Frequency Selection
        2. 8.2.2.2 Inductor Selection
        3. 8.2.2.3 Output Capacitor Selection
        4. 8.2.2.4 Input Capacitor Selection
        5. 8.2.2.5 Bootstrap Capacitor (CBOOT) Selection
        6. 8.2.2.6 FB Voltage Divider for Adjustable Output Voltages
          1. 8.2.2.6.1 Feedforward Capacitor (CFF) Selection
        7. 8.2.2.7 RPG - PG Pullup Resistor
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Ground and Thermal Plane Considerations
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
      2. 9.1.2 Device Nomenclature
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) DEVICE UNIT
RAK (WQFN-HR) RBM (WQFN-HR)
9 PINs 11 PINs
RθJA Junction-to-ambient thermal resistance (JESD 51-7)(2) 84.5 75.1 °C/W
RθJA Junction-to-ambient thermal resistance 32.5 36.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 56.3 37.3 °C/W
RθJB Junction-to-board thermal resistance 23.9 21.1 °C/W
ΨJT Junction-to-top characterization parameter 2.9 0.5 °C/W
ΨJB Junction-to-board characterization parameter 23.2 21 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note. 
(2) The value of RθJA given in this table is only valid for comparison with other packages and can not be used for design purposes. These values were calculated in accordance with JESD 51-7, and simulated on a 4-layer JEDEC board. This value does not represent the performance obtained in an actual application. For example, the EVM RθJA (for RAK package) = 32.5°C/W.