SNVK008 April   2024 TPS7H4011-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Unbiased
      2. 2.3.2 Biased
    4. 2.4 Biased Test Configuration and Condition
  6. 3TI Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Specification Compliance Matrix
      1. 3.2.1 Electrical Characteristics
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   A Appendix A: HDR Results Report at 100krad(Si)

1.2 Device Details

Table 1-1 lists the device information used in the initial TID HDR and LDR characterization.

Table 1-1 Device and Exposure Details
TID Exposure Details
TI DeviceTPS7H4011-SP
Package30-pin CFP (HLB)
TI Part NamePTPS7H4011HLB/EM
TechnologyLBC7 (Linear BiCMOS 7)
Assembly Lot Number4000666MTT
Quantity TestedHDR: 10 Devices
  • Five biased and five unbiased units at 100krad (Si) levels
  • Two control/correlation units with no exposure
HDR Radiation FacilityTexas Instruments, Dallas, TX
HDR Dose Level100krad(Si)
HDR Dose Rate184.909rads(Si)/s ionizing radiation dose rate1
HDR Radiation SourceGamma cell Co-60
Irradiation TemperatureAmbient, room temperature controlled to 25°C (±6°C) per MIL-STD-883 and MIL-STD-750.
  1. 100krad biased and unbiased devices were annealed for 1 week at room temperature with their respective bias condition resulting in an effective dose rate of 165mrad(Si)/s.
GUID-20240411-SS0I-3KMH-Q9VP-VL175T2FZMTP-low.pngFigure 1-1 TPS7H4001-SP Devices Used in Exposure