TIDT434 February   2025

 

  1.   1
  2.   Description
  3.   Features
  4.   Applications
  5. 1Test Prerequisites
    1. 1.1 Voltage and Current Requirements
    2. 1.2 Required Equipment
    3. 1.3 Dimensions
    4. 1.4 Test Setup
  6. 2Testing and Results
    1. 2.1 Efficiency Graphs
    2. 2.2 Efficiency Data
    3. 2.3 Thermal Images
    4. 2.4 Bode Plots
  7. 3Waveforms
    1. 3.1 Switching
    2. 3.2 Output Voltage Ripple
    3. 3.3 Short-Circuit Protection
    4. 3.4 Load Transients
    5. 3.5 Start-up Sequence

Features

  • Rad-tolerant: TPS7H5006-SEP TID 50krad (Si), TPS7H6005-SEP 50krad (Si), OPA4H199-SEP 30krad (Si) SEL, SEB, SEGR immune up to 43MeV-cm2/mg
  • Pin-to-pin radiation hardened options: TPS7H5002-SP TID 100krad (Si), TPS7H6005-SP 100krad (Si), OPA4H199-SP 100krad (Si) SEL, SEB, SEGR immune up to 75MeV-cm2/mg
  • Space-grade Gallium nitride field effect transistor (GaN FET) based
  • > 95% efficiency at 100VIN
  • Overcurrent and short-circuit protection
  • Synchronizable
  • Optional self-bias circuit (higher efficiency with external bias)