TIDUFH7 March   2026

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
    3. 2.3 Highlighted Products
      1. 2.3.1 UCC35131-Q1
      2. 2.3.2 UCC218915-Q1
  9. 3Hardware, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
    2. 3.2 Test Setup
    3. 3.3 Test Results
  10. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Tools
    3. 4.3 Documentation Support
    4. 4.4 Support Resources
    5. 4.5 Trademarks
  11. 5About the Author

3.3 Test Results

Double pulse testing was performed using a power module (part number: G4H11MT23BH4). The module incorporates two power FETs, each rated at 2.3kV with 1.1mΩ on-resistance. The module operates with nominal gate voltages of +18V and –5V.

The double pulse test characterizes two critical switching transients: turn-on and turn-off behavior of the power FETs. Testing was conducted using 2.5Ω gate resistors for both turn-on and turn-off transitions, with the resulting waveforms presented in the following figures.

Figure 3-2, Figure 3-3, and Figure 3-4 demonstrate the turn-off transient characteristics under test conditions of 1.5kV DC link voltage and 400A drain current. Analysis of the voltage transients reveals a common-mode transient immunity (CMTI) measurement of approximately 40nV/ns.


TIDA-011011 Turn OFF Drain Source Voltage Switching Waveform (2.5Ω)

Figure 3-2 Turn OFF Drain Source Voltage Switching Waveform (2.5Ω)

TIDA-011011 Turn OFF Gate Source Voltage Waveform (2.5Ω)

Figure 3-4 Turn OFF Gate Source Voltage Waveform (2.5Ω)

TIDA-011011 Turn OFF Drain Current Waveform (2.5Ω)

Figure 3-3 Turn OFF Drain Current Waveform (2.5Ω)

Figure 3-5, Figure 3-6, and Figure 3-7 present the turn-on transient waveforms measured under test conditions of 1.5kV DC link voltage and 320A switching node current. Analysis of the voltage transients indicates a common-mode transient immunity (CMTI) of approximately 50V/ns during the turn-on switching event.


TIDA-011011 Turn On Drain Source Voltage Measurement Waveform (2.5Ω)

Figure 3-5 Turn On Drain Source Voltage Measurement Waveform (2.5Ω)

TIDA-011011 Turn On Gate to Source Voltage Measurement Waveform (2.5Ω)

Figure 3-7 Turn On Gate to Source Voltage Measurement Waveform (2.5Ω)

TIDA-011011 Turn On Drain Current Measurement Waveform (2.5Ω)

Figure 3-6 Turn On Drain Current Measurement Waveform (2.5Ω)