TIDUFJ9 July 2026
To run this test, the board needs to be connected as shown in 3.2.1.
In this test, the boost stage is tested with the common mode choke shorted, and one of the DC link capacitor is removed for the DC Load connection as shown in Figure 3-1, the testing results are shown below.
The switching node waveform as shown in Figure 3-2 has no big overshoot or ringing even with >40V/ns Vds slew rate, indicating the GaN power stage has a clean power loop and good integrated driver circuit.
Figure 3-2 Boost Switching Node
WaveformAs can be seen in Figure 3-3, the high load maximum efficiency is ~99.2%, the full load efficiency is ~99.1%.
Can be noticed on the low load condition, there are several high efficiency points where the current on the boost inductor goes to 0 and boost is in DCM mode. In this condition, the turning-on voltage on the GaN device is quite low, which achieve almost ZVS, improves the efficiency a lot.
As can be seen in Figure 3-4, the temperature rise of GaN at maximum output power is ~43°C. The temperature is measure on the other side of PCB since the top side of GaN is attached with heatsink. The test condition is input voltage 250VDC, output voltage 400VDC.