SLVK117 October   2022 TPS7H2221-SEP


  1.   Single-Event Effects Test Report of the TPS7H2221-SEP Load Switch
  2.   Trademarks
  3. Introduction
  4. Single-Event Effects (SEE)
  5. Device and Test Board Information
  6. Irradiation Facility and Setup
  7. Depth, Range and LETEFF Calculation
  8. Test Setup and Procedures
  9. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  10. Single-Event Transients (SET) and Single Event Functional Interrupt (SEFI)
    1. 8.1 Single Event Transient (SET)
    2. 8.2 Single Event Functional Interrupt (SEFI)
  11. Event Rate Calculations
  12. 10Summary
  13.   A Appendix: Total Ionizing Dose from SEE Experiments
  14.   B Appendix: References

Single-Event Effects Test Report of the TPS7H2221-SEP Load Switch

The purpose of this study is to characterize the single-event-effects (SEE) performance due to heavy-ion irradiation of the TPS7H2221-SEP. SEE performance was verified at an input voltage range of 1.6-V to 5.5-V. Heavy-ions with LETEFF of 42.7 and 46.8 MeV·cm2/mg were used to irradiate 6 production devices. Flux of ≈105 ions/cm2·s and fluences of ≈107 ions/cm2 per run were used for the DSEE characterization and flux of ≈104 or 105 ions/cm2·s and fluences of ≈3 x 106 or 107 for the SET testing. The results demonstrated that the TPS7H2221-SEP is single-event latch-up (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) -free up to 46.8 MeV·cm2/mg, at T = 125°C and T = 25°C, respectively, and across the full electrical specifications. Single event transient (SET) performance for output voltage excursions ≥ |3%| from the nominal voltage are discussed.