Figure 1-1 shows the structure of the BAW resonator technology. The structure includes a thin layer of piezoelectric film sandwiched between metal films and other layers that confine the mechanical energy. The BAW utilizes this piezoelectric transduction to generate a vibration.
The BAW Oscillator can be used as a drop-in replacement in grid infrastructure designs.
Figure 1-2 and Figure 1-3 demonstrate basic block diagrams of both a Smart Meter and an AC Charging (pile) Station in which the BAW Oscillator is incorporated. Its flexibility in frequency format and voltage levels allow for it to be used throughout out the entire system for alternative clocking needs.
One of the key benefits of the BAW oscillator in comparison to MEMs and Quartz oscillators is its exceptional jitter performance. Figure 1-4 shows the jitter performance of the LMK6C (LVCMOS) BAW oscillator for a 25 MHz output clock.
TI’s BAW Oscillator family supports 1.8-V, 2.5-V, and 3.3-V supply voltages and is available in DLE (3.2 mm × 2.5 mm) and DLF (2.5 mm × 2 mm) packages, which save space in compact board designs. Figure 1-5 showcases the two BAW Oscillator layouts on the left in comparison to both a typical crystal layout, and a crystal with BAW oscillator combination.
The BAW Oscillator offers high grade reliability in terms of temperature stability and vibration resistance. Figure 1-6 compares its performance to Quartz over a -40°C to 105°C temperature range. Over temperature, the BAW oscillator has a ± 10 ppm frequency accuracy.
Figure 1-7 shows the vibration sensitivity of the BAW oscillator. The BAW oscillator has a typical vibration sensitivity of 1 ppb/g, which is significantly better than the 5-10 ppb/g sensitivity of quartz oscillator solutions.