SNVS477C February   2007  – January 2016 LM5109B

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Start-Up and UVLO
      2. 7.3.2 Level Shift
      3. 7.3.3 Output Stages
    4. 7.4 Device Functional Modes
    5. 7.5 HS Transient Voltages Below Ground
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Select Bootstrap and VDD Capacitor
        2. 8.2.2.2 Select External Bootstrap Diode and Its Series Resistor
        3. 8.2.2.3 Selecting External Gate Driver Resistor
        4. 8.2.2.4 Estimate the Driver Power Loss
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source)
  • Inputs Compatible With Independent TTL and CMOS
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load With 15-ns Rise and Fall Times
  • Excellent Propagation Delay Matching (2 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • 8-Pin SOIC and Thermally-Enhanced 8-Pin WSON Package

2 Applications

  • Current-Fed, Push-Pull Converters
  • Half- and Full-Bridge Power Converters
  • Solid-State Motor Drives
  • Two-Switch Forward Power Converters

3 Description

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating
high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and
CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
LM5109B SOIC (8) 4.90 mm × 3.91 mm
WSON (8) 4.00 mm × 4.00 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Application Diagram

LM5109B simplified_application_snvsag6.gif