The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.
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The LM2105 evaluation module (EVM) is a platform for evaluating LM2105 performance. LM2105 is a 105-V, boot-voltage, high-side, low-side driver with 0.5-A peak source and 0.8-A sink current for driving two N-channel metal–oxide–semiconductor field-effect transistors (MOSFETs). The same (...)
The purpose of this design is to demonstrate digital power control using a C2000™ microcontroller and evaluate the powerSUITE Digital Power software tools. The design consists of two separate boards:
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
| WSON (NGT) | 8 | Ultra Librarian |
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