Product details

Bus voltage (Max) (V) 90 Power switch MOSFET Input VCC (Min) (V) 8 Input VCC (Max) (V) 14 Peak output current (A) 1 Rise time (ns) 15 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 8 Rating Catalog Number of channels (#) 2 Fall time (ns) 15 Prop delay (ns) 25 Iq (uA) 10 Input threshold TTL Channel input logic TTL Negative voltage handling at HS pin (V) -1 Features Driver configuration Dual, Independent
Bus voltage (Max) (V) 90 Power switch MOSFET Input VCC (Min) (V) 8 Input VCC (Max) (V) 14 Peak output current (A) 1 Rise time (ns) 15 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 8 Rating Catalog Number of channels (#) 2 Fall time (ns) 15 Prop delay (ns) 25 Iq (uA) 10 Input threshold TTL Channel input logic TTL Negative voltage handling at HS pin (V) -1 Features Driver configuration Dual, Independent
SOIC (D) 8 19 mm² 4.9 x 3.9 WSON (NGT) 8 16 mm² 4 x 4
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source)
  • Inputs Compatible With Independent TTL and CMOS
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load With 15-ns Rise and Fall Times
  • Excellent Propagation Delay Matching (2 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • 8-Pin SOIC and Thermally-Enhanced 8-Pin WSON Package
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source)
  • Inputs Compatible With Independent TTL and CMOS
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load With 15-ns Rise and Fall Times
  • Excellent Propagation Delay Matching (2 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • 8-Pin SOIC and Thermally-Enhanced 8-Pin WSON Package

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.

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Technical documentation

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Type Title Date
* Data sheet LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver datasheet (Rev. C) 15 Oct 2015
Application note External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application note Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018
Application note AN-1317 Selection of External Bootstrap Diode for LM510X Devices (Rev. B) 04 May 2018
Technical article How to achieve higher system robustness in DC drives, part 1: negative voltage 17 Apr 2018
EVM User's guide AN-1299 LM5041 Evaluation Board (Rev. A) 06 May 2013
EVM User's guide AN-1331 LM5033 Evaluation Board (Rev. A) 06 May 2013

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Simulation model

LM5109B PSpice Transient Model

SNVMAM7.ZIP (75 KB) - PSpice Model
Simulation model

LM5109B Unencrypted PSpice Transient Model

SNVMAM8.ZIP (3 KB) - PSpice Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Schematic

LM51xx Schematic Review Template

SNVR521.ZIP (214 KB)
Reference designs

TIDA-010086 — Digital control reference design for cost-optimized battery test systems

This reference design provides a cost-effective solution for battery formation and test applications. This design uses the C2000™ real-time control MCU for high-resolution pulse-width modulation (PWM) generation, and constant-current (CC) and constant-voltage (CV)
control loops. It efficiently (...)
Reference designs

TIDM-DC-DC-BUCK — Digitally Controlled Non-Isolated DC/DC Buck Converter Reference Design

The purpose of this design is to demonstrate digital power control using a C2000™ microcontroller and evaluate the powerSUITE Digital Power software tools. The design consists of two separate boards:
Package Pins Download
SOIC (D) 8 View options
WSON (NGT) 8 View options

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