SCDS112D March   2001  – December 2014 SN74TVC3306

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Voltage Clamping
    4. 7.4 Device Functional Modes
      1. 7.4.1 Voltage Clamping
      2. 7.4.2 Voltage Passing
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
  9. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DCU|8
  • DCT|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Designed to Be Used in Voltage-Limiting Applications
  • 3.5-Ω On-State Connection Between
    Ports A and B
  • Flow-Through Pinout for Ease of Printed Circuit Board Trace Routing
  • Direct Interface With GTL+ Levels
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model
    • 200-V Machine Model
    • 1000-V Charged-Device Model

2 Applications

  • Voltage Level Translation
  • Signal Switching
  • Bus Isolation

3 Description

The SN74TVC3306 device provides three parallel NMOS pass transistors with a common unbuffered gate. The low on-state resistance of the switch allows connections to be made with minimal propagation delay.

The device can be used as a dual switch, with the gates cascaded together to a reference transistor. The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor. This is done to protect components with inputs that are sensitive to high-state voltage-level overshoots.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
SN74TVC3306 SM8 (8) 3.00 mm x 2.80 mm
US8 (8) 2.30 mm x 2.00 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Schematic

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The SN74TVC3306 device has bidirectional capability across many voltage levels. The voltage levels documented in this data sheet are examples.