SBOSAD6A
april 2023 – may 2023
TLV9361-Q1
,
TLV9362-Q1
,
TLV9364-Q1
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information for Single Channel
6.5
Thermal Information for Dual Channel
6.6
Thermal Information for Quad Channel
6.7
Electrical Characteristics
6.8
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
EMI Rejection
7.3.2
Thermal Protection
7.3.3
Capacitive Load and Stability
7.3.4
Electrical Overstress
7.3.5
Overload Recovery
7.3.6
Typical Specifications and Distributions
7.4
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Applications
8.2.1
Low-Side Current Measurement
8.2.2
Design Requirements
8.2.3
Detailed Design Procedure
8.2.4
Application Curves
8.3
Power Supply Recommendations
8.4
Layout
8.4.1
Layout Guidelines
8.4.2
Layout Example
9
Device and Documentation Support
9.1
Device Support
9.1.1
Development Support
9.1.1.1
TINA-TI (Free Software Download)
9.1.1.2
TI Precision Designs
9.2
Documentation Support
9.2.1
Related Documentation
9.3
Receiving Notification of Documentation Updates
9.4
Support Resources
9.5
Trademarks
9.6
Electrostatic Discharge Caution
9.7
Glossary
10
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
PW|14
MPDS360
Thermal pad, mechanical data (Package|Pins)
PW|14
QFND305D
Orderable Information
sbosad6a_oa
sbosad6a_pm
1
Features
AEC-Q100 qualified for automotive applications
Temperature grade 1: –40°C to +125°C
Human-body model (HBM) Electrostatic discharge (ESD) classification level: 2A
Charged-device model (CDM) ESD classification level: C6
Low offset voltage: ±400 µV
Low offset voltage drift: ±1.25 µV/°C
Low noise: 8.5 nV/√
Hz
at 1 kHz, 6 nV/√
Hz
broadband
High common-mode rejection: 110 dB
Low bias current: ±10 pA
Rail-to-rail output
Wide bandwidth: 10.6-MHz GBW, unity-gain stable
High slew rate: 25 V/µs
Low quiescent current: 2.6 mA per amplifier
Wide supply: ±2.25 V to ±20 V, 4.5 V to 40 V
Robust EMIRR performance