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Product details

Parameters

VDS (V) -8 VGS (V) -6 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 19.4 Rds(on) max at VGS=2.5 V (mOhms) 26.5 Rds(on) max at VGS=1.8 V (mOhms) 53 Id peak (Max) (A) -54 Id max cont (A) -3 QG typ (nC) 4.9 QGD typ (nC) 0.6 QGS typ (nC) 1.3 VGSTH typ (V) -0.8 Package (mm) WLP 1.0x1.5 open-in-new Find other P-channel MOSFETs

Package | Pins | Size

DSBGA (YZC) 6 3 mm² 1.006 x 1.5 open-in-new Find other P-channel MOSFETs

Features

  • Ultra-Low Qg and Qgd
  • Low RDS(on)
  • Small Footprint
  • Low Profile 0.62-mm Height
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1-mm × 1.5-mm Wafer Level Package
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Description

This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.

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Technical documentation

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Type Title Date
* Data sheet CSD23203W –8-V P-Channel NexFET Power MOSFET datasheet (Rev. A) Aug. 02, 2016
Technical article Understanding the benefits of “lead-free” power MOSFETs Feb. 08, 2019
Technical article When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Software development

SUPPORT SOFTWARE Download
SLPC019.ZIP (338 KB)

Design tools & simulation

SIMULATION MODEL Download
SLPM143C.ZIP (4 KB) - PSpice Model

CAD/CAE symbols

Package Pins Download
DSBGA (YZC) 6 View options

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring

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