Product details


VDS (V) -20 VGS (V) -12 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 42 Rds(on) max at VGS=2.5 V (mOhms) 70 Rds(on) max at VGS=1.8 V (mOhms) 250 Id peak (Max) (A) -31 Id max cont (A) -5.3 QG typ (nC) 2.7 QGD typ (nC) 0.56 QGS typ (nC) 0.67 VGSTH typ (V) -0.95 Package (mm) LGA 0.8x1.5 open-in-new Find other P-channel MOSFET transistors


  • Low-On Resistance
  • Low Qg and Qgd
  • Ultra-Small Footprint
    • 1.53 mm × 0.77 mm
    • 0.50-mm Pad Pitch
  • Low Profile
    • 0.35-mm Height
  • Integrated ESD Protection Diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and Halogen Free
  • RoHS Compliant
open-in-new Find other P-channel MOSFET transistors


This 29.7-mΩ, –20-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

open-in-new Find other P-channel MOSFET transistors

Technical documentation

= Top documentation for this product selected by TI
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Type Title Date
* Datasheet CSD25485F5 –20-V P-Channel FemtoFET™ MOSFET datasheet (Rev. A) Jan. 06, 2017
Technical articles Understanding the benefits of “lead-free” power MOSFETs Feb. 07, 2019
User guide Ultra-Small Footprint P-Channel FemtoFET™ MOSFET Test EVM Dec. 06, 2017
User guide FemtoFET Surface Mount Guide (Rev. D) Jul. 07, 2016
Technical articles When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical articles 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Software development

SLPC019.ZIP (338 KB)

Design tools & simulation

SLPM192A.ZIP (3 KB) - PSpice Model
SLPM265.ZIP (10 KB) - TINA-TI Spice Model
SLPM266.TSC (508 KB) - TINA-TI Reference Design
Buck Converter NexFET™ Selection Tool
FETPWRCALC — This tool is designed to assist engineers in the selection of Texas Instruments’ discrete power MOSFET and Power Block devices for their synchronous buck design. Users can input the conditions for their power supply and compare various discrete and power block solutions by power loss, relative (...)
  • Vary power supply conditions and observe TI’s most efficient solutions for any set of input parameters
  • Select from a pre-established list of TI controllers or enter your own custom IC
  • Rank solutions by effective power loss and compare by relative 1k price, device package, and total PCB footprint
  • (...)

CAD/CAE symbols

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