CSD25485F5
-20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection
CSD25485F5
- Low-on resistance
- Low Qg and Qgd
- Ultra-small footprint
- 1.53 mm × 0.77 mm
- 0.50-mm pad pitch
- Low profile
- 0.36-mm height
- Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
- Lead and halogen free
- RoHS compliant
This 29.7-mΩ, –20-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
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Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | CSD25485F5 –20-V P-Channel FemtoFET™ MOSFET datasheet (Rev. B) | PDF | HTML | 09 Sep 2021 |
Application note | MOSFET Support and Training Tools (Rev. C) | PDF | HTML | 22 Nov 2023 | |
Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | 13 Mar 2023 | |
Application note | Solving Assembly Issues with Chip Scale Power MOSFETs | PDF | HTML | 21 Oct 2022 | |
Application note | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | 31 May 2022 | |
More literature | WCSP Handling Guide | 07 Nov 2019 | ||
EVM User's guide | Ultra-Small Footprint P-Channel FemtoFET™ MOSFET Test EVM | 06 Dec 2017 | ||
Design guide | FemtoFET Surface Mount Guide (Rev. D) | 07 Jul 2016 | ||
Application note | Semiconductor and IC Package Thermal Metrics (Rev. C) | PDF | HTML | 19 Apr 2016 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
CSD25485F5 TINA-TI Reference Design
Package | Pins | Download |
---|---|---|
PICOSTAR (YJK) | 3 | View options |
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