Product details

Number of full bridges 1 Vs (Min) (V) 5 Vs ABS (Max) (V) 115 Control mode Independent 1/2-Bridge Control interface Hardware (GPIO) Rating Catalog Operating temperature range (C) -40 to 125
Number of full bridges 1 Vs (Min) (V) 5 Vs ABS (Max) (V) 115 Control mode Independent 1/2-Bridge Control interface Hardware (GPIO) Rating Catalog Operating temperature range (C) -40 to 125
VQFN (RGE) 24 16 mm² 4 x 4
  • 100-V H-bridge gate driver
    • Drives N-channel MOSFETs (NMOS)
    • Gate driver supply (GVDD): 5-20 V
    • MOSFET supply (SHx) support up to 100 V
  • Integrated bootstrap diodes
  • Supports inverting and non-inverting INLx inputs (QFN package)
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A Sink current
  • Supports up to 15s battery powered applications
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 115-V
  • Supports negative transients down to -22 V on SHx pins
  • Adjustable deadtime through DT pin in QFN package

  • Fixed Deadtime insertion of 200 ns in TSSOP package
  • Supports 3.3-V, and 5-V logic inputs with 20-V abs max
  • 4-ns typical propogation delay matching
  • Compact QFN and TSSOP packages and footprints
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)
  • 100-V H-bridge gate driver
    • Drives N-channel MOSFETs (NMOS)
    • Gate driver supply (GVDD): 5-20 V
    • MOSFET supply (SHx) support up to 100 V
  • Integrated bootstrap diodes
  • Supports inverting and non-inverting INLx inputs (QFN package)
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A Sink current
  • Supports up to 15s battery powered applications
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 115-V
  • Supports negative transients down to -22 V on SHx pins
  • Adjustable deadtime through DT pin in QFN package

  • Fixed Deadtime insertion of 200 ns in TSSOP package
  • Supports 3.3-V, and 5-V logic inputs with 20-V abs max
  • 4-ns typical propogation delay matching
  • Compact QFN and TSSOP packages and footprints
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)

The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.

The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx pins. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.

The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx pins. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

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Technical documentation

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Type Title Date
* Data sheet DRV8770: 100-V Brushed DC Gate Driver datasheet 29 Jan 2020
User guide DRV8770 100-V Gate Driver Evaluation Module 29 Sep 2021
Certificate DRV8770EVM EU RoHS Declaration of Conformity (DoC) 16 Aug 2021
Technical article Why are you still driving automotive motors with relays? 13 Jul 2017
Technical article The story of motor-drive integration 09 Jan 2017
Technical article How to create a dynamic power solution for stepper motors, relays and LEDs 01 Nov 2016
Technical article How to avoid motor and system overvoltage using AVS technology without external components 14 Oct 2016

Design & development

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Evaluation board

DRV8770EVM — DRV8770 100-V gate driver evaluation module

The DRV8770 evaluation module (EVM) allows for easy evaluation of the DRV8770 device.

The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8770 is equipped with protection features such as BST undervoltage lockout (...)

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VQFN (RGE) 24 View options

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