LM2105
107-V 0.5-A/0.8-A half-bridge gate driver with 5-V UVLO and integrated bootstrap diode
LM2105
- Drives two N-channel MOSFETs in half-bridge configuration
- Integrated bootstrap diode
- 5-V typical undervoltage lockout on GVDD
- 107-V absolute maximum voltage on BST
- –19.5-V absolute maximum negative transient voltage handling on SH
- 0.5-A/0.8-A peak source/sink currents
- 115-ns typical propagation delay
The LM2105 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The integrated bootstrap diode saves board space and reduces system cost by eliminating the need for an external discrete diode.
The –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The small, thermally-enhanced 8-pin WSON package improves PCB layout by allowing the driver to be placed closer to the motor phases. The LM2105 is also available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down.
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LM2105EVM — LM2105 evaluation module for 105-V half-bridge driver with integrated bootstrap diode
The LM2105 evaluation module (EVM) is a platform for evaluating LM2105 performance. LM2105 is a 105-V, boot-voltage, high-side, low-side driver with 0.5-A peak source and 0.8-A sink current for driving two N-channel metal–oxide–semiconductor field-effect transistors (MOSFETs). The same (...)
PSPICE-FOR-TI — PSpice® for TI design and simulation tool
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
| WSON (DSG) | 8 | Ultra Librarian |
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