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Power switch MOSFET Undervoltage lockout (typ) (V) 8 Rating Catalog
Power switch MOSFET Undervoltage lockout (typ) (V) 8 Rating Catalog
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Drives both a high side and low side N-Channel MOSFET
  • Independent high and low driver logic inputs (TTL for LM5101 or CMOS for LM5100)
  • Bootstrap supply voltage range up to 118V DC
  • Fast propagation times (25 ns typical)
  • Drives 1000 pF load with 15 ns rise and fall times
  • Excellent propagation delay matching (3 ns typical)
  • Supply rail under-voltage lockouts
  • Low power consumption
  • Pin compatible with HIP2100/HIP2101

  • Drives both a high side and low side N-Channel MOSFET
  • Independent high and low driver logic inputs (TTL for LM5101 or CMOS for LM5100)
  • Bootstrap supply voltage range up to 118V DC
  • Fast propagation times (25 ns typical)
  • Drives 1000 pF load with 15 ns rise and fall times
  • Excellent propagation delay matching (3 ns typical)
  • Supply rail under-voltage lockouts
  • Low power consumption
  • Pin compatible with HIP2100/HIP2101

The LM5100/LM5101 High Voltage Gate Drivers are designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100V. The outputs are independently controlled with CMOS input thresholds (LM5100) or TTL input thresholds (LM5101). An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. This device is available in the standard SOIC-8 pin and the LLP-10 pin packages.


The LM5100/LM5101 High Voltage Gate Drivers are designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100V. The outputs are independently controlled with CMOS input thresholds (LM5100) or TTL input thresholds (LM5101). An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. This device is available in the standard SOIC-8 pin and the LLP-10 pin packages.


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Type Title Date
* Data sheet LM5100/LM5101 High Voltage High Side and Low Side Gate Driver datasheet (Rev. C) 16 Mar 2005
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Selection guide Power Management Guide 2018 (Rev. R) 25 Jun 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018
Technical article How to achieve higher system robustness in DC drives, part 1: negative voltage 17 Apr 2018
EVM User's guide AN-1299 LM5041 Evaluation Board (Rev. A) 06 May 2013
EVM User's guide AN-1923 Current Sense Demo Board (SOIC) User's Guide (Rev. A) 26 Apr 2013

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