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LM5101

ACTIVE

High voltage high side and low side gate driver

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UCC27201A ACTIVE 120V 3A half-bridge gate driver with 8V UVLO, negative voltage handling, and TTL inputs Newer, higher current version available with improved specs.

Product details

Power switch MOSFET Operating temperature range (°C) to Undervoltage lockout (typ) (V) 8 Rating Catalog
Power switch MOSFET Operating temperature range (°C) to Undervoltage lockout (typ) (V) 8 Rating Catalog
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Drives both a high side and low side N-Channel MOSFET
  • Independent high and low driver logic inputs (TTL for LM5101 or CMOS for LM5100)
  • Bootstrap supply voltage range up to 118V DC
  • Fast propagation times (25 ns typical)
  • Drives 1000 pF load with 15 ns rise and fall times
  • Excellent propagation delay matching (3 ns typical)
  • Supply rail under-voltage lockouts
  • Low power consumption
  • Pin compatible with HIP2100/HIP2101

  • Drives both a high side and low side N-Channel MOSFET
  • Independent high and low driver logic inputs (TTL for LM5101 or CMOS for LM5100)
  • Bootstrap supply voltage range up to 118V DC
  • Fast propagation times (25 ns typical)
  • Drives 1000 pF load with 15 ns rise and fall times
  • Excellent propagation delay matching (3 ns typical)
  • Supply rail under-voltage lockouts
  • Low power consumption
  • Pin compatible with HIP2100/HIP2101

The LM5100/LM5101 High Voltage Gate Drivers are designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100V. The outputs are independently controlled with CMOS input thresholds (LM5100) or TTL input thresholds (LM5101). An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. This device is available in the standard SOIC-8 pin and the LLP-10 pin packages.


The LM5100/LM5101 High Voltage Gate Drivers are designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100V. The outputs are independently controlled with CMOS input thresholds (LM5100) or TTL input thresholds (LM5101). An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. This device is available in the standard SOIC-8 pin and the LLP-10 pin packages.


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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet LM5100/LM5101 High Voltage High Side and Low Side Gate Driver datasheet (Rev. C) Mar 16, 2005
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML Mar 25, 2024
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML Sep 8, 2023
Application note Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML Feb 17, 2022
Application brief External Gate Resistor Selection Guide (Rev. A) Feb 28, 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) Feb 28, 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) Oct 29, 2018
Selection guide Power Management Guide 2018 (Rev. R) Jun 25, 2018

Design & development

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Evaluation board

UCC27288EVM — UCC27288 100-V, 3-A, 8-V UVLO half-bridge gate driver evaluation module

UCC27288EVM is designed for evaluating UCC27288D, which is a 100-V half bridge gate driver with 2.5-A peak source current and 3.5-A peak sink current capability. This EVM serves as a reference design for driving power MOSFETs with up to 20-V drive voltage.
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