Product details

Vin (Min) (V) 3.2 Vin (Max) (V) 65 Features Linear control Iq (Typ) (mA) 0.08 Iq (Max) (mA) 0.13 IGate source (Typ) (uA) 11000 IGate pulsed (Typ) (A) 2.3 Operating temperature range (C) -40 to 125 VSense reverse (Typ) (mV) -11 Rating Automotive Channel(s) controlled (#) 1 FET External
Vin (Min) (V) 3.2 Vin (Max) (V) 65 Features Linear control Iq (Typ) (mA) 0.08 Iq (Max) (mA) 0.13 IGate source (Typ) (uA) 11000 IGate pulsed (Typ) (A) 2.3 Operating temperature range (C) -40 to 125 VSense reverse (Typ) (mV) -11 Rating Automotive Channel(s) controlled (#) 1 FET External
SOT-23-THN (DDF) 8 8 mm² 2.9 x 2.8
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V startup)
  • –33-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20 mV ANODE to CATHODE forward voltage drop regulation
  • 1-µA shutdown current (EN = Low)
  • 80-µA operating quiescent current (EN = High)
  • 2-A peak gate turn-off current
  • Fast response to reverse current blocking: < 0.75 µs
  • Integrated battery voltage monitoring switch (SW)
  • Meets automotive ISO7637 transient requirements without additional input TVS diode (TVS less)
  • 8-Pin SOT-23 package 2.90 mm × 1.60 mm
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V startup)
  • –33-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20 mV ANODE to CATHODE forward voltage drop regulation
  • 1-µA shutdown current (EN = Low)
  • 80-µA operating quiescent current (EN = High)
  • 2-A peak gate turn-off current
  • Fast response to reverse current blocking: < 0.75 µs
  • Integrated battery voltage monitoring switch (SW)
  • Meets automotive ISO7637 transient requirements without additional input TVS diode (TVS less)
  • 8-Pin SOT-23 package 2.90 mm × 1.60 mm

The LM74701-Q1 is an automotive AEC Q100 qualified ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode for low loss reverse polarity protection with a 20-mV forward voltage drop. LM74701-Q1 is suitable for input protection of 12-V automotive systems. The 3.2-V input voltage support is particularly well suited for severe cold crank requirements in automotive systems.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device suitable for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions. The LM74701-Q1 has a unique integrated VDS clamp feature which enables users to achieve TVS less input polarity protection solution and save on average a typical 60% of PCB space in constrained automotive systems.

The LM74701-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. With the enable pin low, the controller is off and draws approximately 1 µA of current.

The LM74701-Q1 is an automotive AEC Q100 qualified ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode for low loss reverse polarity protection with a 20-mV forward voltage drop. LM74701-Q1 is suitable for input protection of 12-V automotive systems. The 3.2-V input voltage support is particularly well suited for severe cold crank requirements in automotive systems.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device suitable for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions. The LM74701-Q1 has a unique integrated VDS clamp feature which enables users to achieve TVS less input polarity protection solution and save on average a typical 60% of PCB space in constrained automotive systems.

The LM74701-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. With the enable pin low, the controller is off and draws approximately 1 µA of current.

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Technical documentation

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Type Title Date
* Data sheet LM74701-Q1 TVS Less Automotive Reverse Battery Protection Ideal Diode Controller datasheet (Rev. A) 14 Dec 2021
Analog design journal Going TVS-less in Automotive Reverse Battery Protection Designs 18 Nov 2021
User guide LM74701-Q1EVM User's Guide (Rev. A) 08 Sep 2021

Design & development

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Evaluation board

LM74701Q1EVM — LM74701-Q1 evaluation module for ideal diode controller with integrated VDS clamp

The LM74701-Q1 evaluation module (LM74701Q1EVM) helps designers evaluate the operation and performance of the LM74701-Q1 ideal diode controller with integrated VDS clamp . This evaluation module demonstrates how an N-channel power MOSFET can be used to realize input reverse voltage protection with (...)

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LM74701-Q1 PSpice Transient Model

SNOM717.ZIP (107 KB) - PSpice Model
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PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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SOT-23-THIN (DDF) 8 View options

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