Product details

FET External Vin (Min) (V) 7 Vin (Max) (V) 26 Vabsmax_cont (V) 60 Current limit (Min) (A) 0.01 Current limit (Max) (A) 500 Overcurrent response Current limiting, Circuit breaker Fault response Latch Off UL recognition
FET External Vin (Min) (V) 7 Vin (Max) (V) 26 Vabsmax_cont (V) 60 Current limit (Min) (A) 0.01 Current limit (Max) (A) 500 Overcurrent response Current limiting, Circuit breaker Fault response Latch Off UL recognition
SOIC (D) 8 19 mm² 4.9 x 3.9
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

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Technical documentation

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* Data sheet LM9061 and LM9061-Q1 High-Side Protection Controller datasheet (Rev. I) 04 Jan 2017
E-book 11 Ways to Protect Your Power Path white paper 03 Jul 2019
User guide LM9061 High-Side Protection Controller EVM 07 Nov 2014

Design & development

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Evaluation board

LM9061EVM — LM9061EVM High-Side Protection Controller Evaluation Module

The LM9061EVM evaluation module demonstrates high-side protection to a connected load from over-current and over-voltage conditions.  An ON/OFF input controls the gate drive to a high-side MOSFET. Over-current protection is performed by monitoring the voltage drop (VDS) across the MOSFET, which is (...)

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PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

TIDA-00296 — Automotive Body Control Module Driver Reference Design

TIDA-00296 is a reference design that highlights TI's high-side and low-side relay, motor, and load driver portfolios. The loads for this design (door locks, window lifts, seat heaters, HVAC, lamps, and LEDs) were chosen to show the range of loads that a BCM can drive and how TI's solutions fit (...)
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