LMG3522EVM-042 LMG3522R030-Q1 automotive 650-V 30-mΩ GaN FET with integrated driver daughter card angled board image

LMG3522EVM-042

LMG3522R030-Q1 automotive 650-V 30-mΩ GaN FET with integrated driver daughter card

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Features for the LMG3522EVM-042

  • Input voltage operates up to 650 V
  • Simple open loop design to evaluate performance of LMG3522R030-Q1
  • Single/dual PWM input on board for PWM signal with variable dead time
  • Cycle-by-cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes

Description for the LMG3522EVM-042

LMG3522EVM-042 configures two LMG3522R030 GaN FETs in a half bridge with the cycle-by-cycle over current protection, latched short circuit protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.

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