LMG3522EVM-042

LMG3522R030-Q1 automotive 650-V 30-mΩ GaN FET with integrated driver daughter card

LMG3522EVM-042

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Overview

LMG3522EVM-042 configures two LMG3522R030 GaN FETs in a half bridge with the cycle-by-cycle over current protection, latched short circuit protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.

Features
  • Input voltage operates up to 650 V
  • Simple open loop design to evaluate performance of LMG3522R030-Q1
  • Single/dual PWM input on board for PWM signal with variable dead time
  • Cycle-by-cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes

  • Attached heatsink with fan

Gallium nitride (GaN) ICs
LMG3522R030 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

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  1. Order the LMG3522EVM-042 automotive 650-V 30-mΩ GaN FET with integrated driver daughter card
  2. (Optional) Order the LMG342X-BB-EVM GaN system-level EVM for the LMG342x family
  3. Read the LMG352XEVM-04X User's Guide

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Daughter card

LMG3522EVM-042 — LMG3522R030-Q1 automotive 650-V 30-mΩ GaN FET with integrated driver daughter card

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Evaluation board

LMG342X-BB-EVM — LMG342x GaN system-level evaluation motherboard for LMG342x family

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TI's Standard Terms and Conditions for Evaluation Items apply.

Technical documentation

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Type Title Date
* EVM User's guide LMG352XEVM-04X EVM User's Guide (Rev. A) 03 Feb 2021
Data sheet LMG352xR030-Q1 650-V 30-mΩ GaN FET with Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. B) PDF | HTML 10 Jun 2021
Certificate LMG3522EVM-042 EU Declaration of Conformity (DoC) 26 Oct 2020

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