The LMG3616 is a 650-V 270-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3616 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.
Programmable turn-on slew rates provide EMI and ringing control.
The LMG3616 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.
| Top documentation | Type | Title | Format options | Date |
|---|---|---|---|---|
| * | Data sheet | LMG3616650-V270-mΩ GaN FET With Integrated Driver datasheet | PDF | HTML | Nov 14, 2023 |
| Technical article | The benefits of low-power GaN in common AC/DC power topologies | PDF | HTML | Jan 30, 2024 | |
| Product overview | Designing With the LMG362x Family of Low-Power GaN FETs | PDF | HTML | Nov 28, 2023 |
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The LMG3626EVM-074 evaluation module (EVM) demonstrates high-efficiency and high-density for a 65-W USB Type-C® power delivery (PD) off-line adapter using the LMG3626 integrated GaN FET with current-sense emulation. The input supports a universal 90 Vac to 265 Vac and the single output can be (...)
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| VQFN (REQ) | 38 | Ultra Librarian |
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